SEMICONDUCTOR TECHNICAL DATA
The UB Series logic gates are constructed with P and N channel
enhancement mode devices in a single monolithic structure (Complemen-
tary MOS). Their primary use is where low power dissipation and/or high
noise immunity is desired. The UB set of CMOS gates are inverting
non–buffered functions.
•
•
•
Supply Voltage Range = 3.0 Vdc to 18 Vdc
Linear and Oscillator Applications
Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range
Double Diode Protection on All Inputs
•
•
Pin–for–Pin Replacements for Corresponding CD4000 Series UB Suffix
Devices
LOGIC DIAGRAMS
MC14001UB
Quad 2–Input
NOR Gate
MC14002UB
Dual 4–Input
NOR Gate
MC14011UB
Quad 2–Input
NAND Gate
L SUFFIX
CERAMIC
CASE 632
2
1
1
2
3
3
3
4
2
5
1
5
6
4
4
6
8
5
9
10
11
12
8
10
11
10
11
P SUFFIX
PLASTIC
CASE 646
9
9
12
13
12
13
13
NC = 6, 8
D SUFFIX
SOIC
CASE 751A
MC14012UB
Dual 4–Input
NAND Gate
MC14023UB
Triple 3–Input
NAND Gate
MC14025UB
Triple 3–Input
NOR Gate
1
1
2
ORDERING INFORMATION
2
3
9
2
9
MC14XXXUBCP
MC14XXXUBCL
MC14XXXUBD
Plastic
Ceramic
SOIC
1
8
3
8
3
4
5
9
4
6
4
5
11
6
T
= – 55° to 125°C for all packages.
A
5
11
10
11
12
13
12
13
10
12
13
10
This device contains protection circuitry to
guard against damage due to high static
voltages or electric fields. However, pre-
cautions must be taken to avoid applications of
any voltage higher than maximum rated volt-
agesto this high–impedance circuit. For proper
NC = 6, 8
V
V
= PIN 14
= PIN 7
DD
SS
operation, V and V
should be constrained
FOR ALL DEVICES
in out
to the range V
(V or V
)
V
DD
.
SS in out
Unused inputs must always be tied to an
appropriatelogic voltage level (e.g., either V
SS
or V ). Unused outputs must be left open.
DD
REV 3
1/94
Motorola, Inc. 1995
MC14001UB
18
MOTOROLA CMOS LOGIC DATA