Datasheet > MC13144DR2

MC13144DR2

更新时间： 2024-02-10 09:01:09

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		射频微波
页数	文件大小	规格书
45页	931K
描述
Wide Band Low Power Amplifier, 2000MHz Max, PLASTIC, SO-8

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技术参数
数据手册

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MC13144DR2 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.17	其他特性：	LOW NOISE
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	6 dB	最大工作频率：	2000 MHz
最高工作温度：	85 °C	最低工作温度：	-40 °C
射频/微波设备类型：	WIDE BAND LOW POWER	Base Number Matches：	1

MC13144DR2 数据手册

VHF – 2.0 GHz LOW

NOISE AMPLIFIER WITH

PROGRAMMABLE BIAS

The MC13144 is designed in the Motorola High Frequency Bipolar

MOSIAC V wafer process to provide excellent performance in analog and

digital communication systems. It includes a cascoded LNA usable up to

2.0 GHz and at 1.8 Vdc, with 2 bit digital programming of the LNA bias.

Targeted applications are in the UHF Family Radio Services, UHF and

800 MHz Special Mobile Radio, 800 MHz Cellular and GSM, PCS, DECT

and PHS at 1.8 to 2.0 GHz and Cordless Telephones in the 902 to 928 MHz

band covered by FCC Title 47; Part 15. The MC13144 offers the following

features:

SEMICONDUCTOR

TECHNICAL DATA

• 17 dB Gain at 900 MHz

• 1.4 dB Noise Figure at 900 MHz

• 1.0 dB Compression Point of –7.0 dBm; Input Third Order Intercept

Point of –5.0 dBm

• Low Operating Supply Voltage (1.8 to 6.0 Vdc)

• Programmable Bias with Enable 1 and Enable 2

D SUFFIX

PLASTIC PACKAGE

CASE 751

• Enable 1 and Enable 2 Programmed High for Optimal Noise Figure and

Gain Associated with NF

(SO–8)

• Can Override Enable and Externally Program In Up to 15 mA

Typical Application as 900 MHz Low Noise Amplifier

PIN CONNECTIONS AND

FUNCTIONAL BLOCK DIAGRAM

En1 En2

1.6 p

En1

En2

Output

8.2 nH

Out

47 p

100 n

100 p

Input

5.6 nH

ORDERING INFORMATION

Operating

Temperature Range

Device

Package

This device contains 67 active transistors.

SO–8

MC13144D

= – 40° to +85°C

8–252

MOTOROLA ANALOG IC DEVICE DATA

12 3 4 5 6 7...45

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