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MC10EL05DR2G PDF预览

MC10EL05DR2G

更新时间: 2024-11-20 05:10:27
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发器逻辑集成电路光电二极管
页数 文件大小 规格书
9页 153K
描述
5V ECL 2-Input Differential AND/NAND

MC10EL05DR2G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOIC包装说明:SOP, SOP8,.25
针数:8Reach Compliance Code:compliant
HTS代码:8542.39.00.01Factory Lead Time:15 weeks
风险等级:5.38Is Samacsys:N
其他特性:NECL MODE: VCC = 0V WITH VEE = -4.2V TO -5.7V系列:10EL
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm逻辑集成电路类型:AND/NAND GATE
湿度敏感等级:1功能数量:1
输入次数:2端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260电源:-5.2 V
最大电源电流(ICC):22 mAProp。Delay @ Nom-Sup:0.44 ns
传播延迟(tpd):0.39 ns认证状态:Not Qualified
施密特触发器:NO座面最大高度:1.75 mm
子类别:Gates最大供电电压 (Vsup):5.7 V
最小供电电压 (Vsup):4.2 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:ECL
温度等级:INDUSTRIAL端子面层:Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3.9 mmBase Number Matches:1

MC10EL05DR2G 数据手册

 浏览型号MC10EL05DR2G的Datasheet PDF文件第2页浏览型号MC10EL05DR2G的Datasheet PDF文件第3页浏览型号MC10EL05DR2G的Datasheet PDF文件第4页浏览型号MC10EL05DR2G的Datasheet PDF文件第5页浏览型号MC10EL05DR2G的Datasheet PDF文件第6页浏览型号MC10EL05DR2G的Datasheet PDF文件第7页 
MC10EL05, MC100EL05  
5VꢀECL 2-Input Differential  
AND/NAND  
The MC10EL/100EL05 is a 2-input differential AND/NAND gate.  
The device is functionally equivalent to the E404 device with higher  
performance capabilities. With propagation delays and output transition  
times significantly faster than the E404, the EL05 is ideally suited for  
those applications which require the ultimate in AC performance.  
Because a negative 2-input NAND is equivalent to a 2-input OR  
function, the differential inputs and outputs of the device allows the EL05  
to also be used as a 2-input differential OR/NOR gate.  
http://onsemi.com  
MARKING  
DIAGRAMS*  
8
The differential inputs employ clamp circuitry so that under open input  
8
1
8
1
conditions (pulled down to V ) the input to the AND gate will be  
EE  
HEL05  
ALYW  
G
KEL05  
ALYW  
G
HIGH. In this way, if one set of inputs is open, the gate will remain active  
SOIC8  
D SUFFIX  
CASE 751  
to the other input.  
The 100 Series contains temperature compensation.  
1
8
Features  
8
8
1
275 ps Propagation Delay  
1
HL05  
ALYWG  
G
KL05  
ESD Protection: > 1 kV Human Body Model,  
TSSOP8  
DT SUFFIX  
CASE 948R  
ALYWG  
> 100 V Machine Model  
G
PECL Mode Operating Range: V = 4.2 V to 5.7 V with V = 0 V  
CC  
EE  
1
NECL Mode Operating Range: V = 0 V with V = 4.2 V to 5.7 V  
CC  
EE  
Internal Input Pulldown Resistors  
Meets or Exceeds JEDEC Spec EIA/JESD78 IC Latchup Test  
Moisture Sensitivity Level 1  
DFN8  
MN SUFFIX  
CASE 506AA  
For Additional Information, see Application Note AND8003/D  
1
4
1
4
Flammability Rating: UL 94 V0 @ 0.125 in,  
Oxygen Index: 28 to 34  
Transistor Count = 44 devices  
PbFree Packages are Available  
L
= Wafer Lot  
= Year  
= Work Week  
= Date Code  
= PbFree Package  
H
K
= MC10  
= MC100  
Y
W
D
G
4O = MC10  
2C = MC100  
A
= Assembly Location  
(Note: Microdot may be in either location)  
*For additional marking information, refer to  
Application Note AND8002/D.  
D
D
1
2
8
7
V
CC  
0
0
Q
Q
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
D
D
3
4
6
5
1
1
V
EE  
Figure 1. Logic Diagram and Pinout  
Assignment  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
December, 2006 Rev. 5  
MC10EL05/D  

MC10EL05DR2G 替代型号

型号 品牌 替代类型 描述 数据表
MC10EL05DR2 ONSEMI

完全替代

2-Input Differential AND/NAND
MC10EL05DG ONSEMI

完全替代

5V ECL 2-Input Differential AND/NAND
MC10EL05D ONSEMI

完全替代

5V ECL 2-Input Differential AND/NAND

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