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MC100EP16VBDR2G PDF预览

MC100EP16VBDR2G

更新时间: 2024-11-16 05:22:27
品牌 Logo 应用领域
安森美 - ONSEMI 线路驱动器或接收器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
10页 151K
描述
3.3V / 5V ECL Differential Receiver/Driver with High and Low Gain

MC100EP16VBDR2G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.72
Is Samacsys:N其他特性:CAN ALSO OPERATE WITH -3V TO -5.5V SUPPLY IN NECL MODE
差分输出:YES驱动器位数:1
高电平输入电流最大值:0.00015 A输入特性:DIFFERENTIAL
接口集成电路类型:LINE TRANSCEIVER接口标准:GENERAL PURPOSE
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm湿度敏感等级:1
标称负供电电压:-4.5 V功能数量:1
端子数量:8最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:-4.5 V
认证状态:Not Qualified最大接收延迟:0.4 ns
接收器位数:1座面最大高度:1.75 mm
子类别:Line Driver or Receivers最大压摆率:38 mA
最大供电电压:5.5 V最小供电电压:3 V
标称供电电压:3.3 V表面贴装:YES
技术:ECL温度等级:INDUSTRIAL
端子面层:Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40最大传输延迟:0.4 ns
宽度:3.9 mmBase Number Matches:1

MC100EP16VBDR2G 数据手册

 浏览型号MC100EP16VBDR2G的Datasheet PDF文件第2页浏览型号MC100EP16VBDR2G的Datasheet PDF文件第3页浏览型号MC100EP16VBDR2G的Datasheet PDF文件第4页浏览型号MC100EP16VBDR2G的Datasheet PDF文件第5页浏览型号MC100EP16VBDR2G的Datasheet PDF文件第6页浏览型号MC100EP16VBDR2G的Datasheet PDF文件第7页 
MC100EP16VB  
3.3Vꢀ/ꢀ5VꢁECL Differential  
Receiver/Driver with High  
and Low Gain  
Description  
http://onsemi.com  
MARKING DIAGRAMS*  
The EP16VB is a worldclass differential receiver/driver. The  
device is functionally equivalent to the EP16 and LVEP16 devices but  
with both high and low gain outputs. Q and Q outputs have a DC  
HG  
HG  
gain several times larger than the DC gain of an EP16. Q output is  
provided for feedback purposes.  
8
KEP65  
ALYW  
G
SOIC8  
D SUFFIX  
CASE 751  
The V pin, an internally generated voltage supply, is available to  
BB  
8
this device only. For single-ended input conditions, the unused  
1
1
differential input is connected to V as a switching reference voltage.  
1
BB  
V
BB  
may also rebias AC coupled inputs. When used, decouple V  
BB  
and V via a 0.01 mF capacitor and limit current sourcing or sinking  
CC  
8
1
to 0.5 mA. When not used, V should be left open.  
BB  
TSSOP8  
DT SUFFIX  
CASE 948R  
KP65  
8
Special considerations are required for differential inputs under No  
Signal conditions to prevent instability.  
The 100 Series contains temperature compensation.  
ALYWG  
G
Features  
Gain > 200  
Maximum Frequency > 3 GHz Typical  
DFN8  
MN SUFFIX  
CASE 506AA  
1
4
PECL Mode Operating Range: V = 3.0 V to 5.5 V  
CC  
with V = 0 V  
EE  
A
L
Y
W
M
G
= Assembly Location  
= Wafer Lot  
= Year  
= Work Week  
= Date Code  
= PbFree Package  
NECL Mode Operating Range: V = 0 V  
CC  
with V = 3.0 V to 5.5 V  
EE  
V Output  
BB  
PbFree Packages are Available  
(Note: Microdot may be in either location)  
*For additional marking information, refer to  
Application Note AND8002/D.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 7 of this data sheet.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
December, 2006 Rev. 4  
MC100EP16VB/D  

MC100EP16VBDR2G 替代型号

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MC100EP16VBDR2 ONSEMI

完全替代

3.3V / 5V ECL Differential Receiver/Driver with High and Low Gain
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完全替代

3.3V / 5V ECL Differential Receiver/Driver with High and Low Gain

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