MBRS360P
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES, 60 VOLTS
Features
• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guard−Ring for Stress Protection
SMC
CASE 403AC
• These are Pb−Free Devices
Mechanical Characteristics
MARKING DIAGRAM
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
• Weight: 217 mg (Approximately)
AYWW
B36G
G
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
B36
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
• Cathode Polarity Band
• Device Meets MSL 1 Requirements
• ESD Ratings:
(Note: Microdot may be in either location)
♦ Machine Model, C
♦ Human Body Model, 3B
ORDERING INFORMATION
†
Device
Package
Shipping
MBRS360PT3G
SMC
2,500 /
(Pb−Free)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
August, 2015 − Rev. 0
MBRS360P/D