Datasheet > MBRS2540CT

MBRS2540CT

更新时间： 2024-01-30 11:29:58

品牌	Logo	应用领域
圣诺 - SENO		/
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描述
25.0A SCHOTTKY BARRIER DIODE

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数据手册

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MBRS2540CT 数据手册

Zibo Seno Electronic Engineering Co., Ltd.

MBRS2540CT-MBRS25200CT

25.0A SCHOTTKY BARRIER DIODE

Features

Schottky Barrier Chip

Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

For Use in Low Voltage Application

Guard Ring Die Construction

TO-263/D²PAK

Plastic Case Material has UL Flammability

Cꢀ lꢀaꢀsꢀsꢀification Rating 94V-O

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Mechanical Data

Case: TO-263/D²PAK, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: See Diagram

Mounting Position: Any

Lead Free: For RoHS / Lead Free Version

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MBRS

2540CT

MBRS MBRS

MBRS

2580CT

MBRS

2545CT

MBRS

Characteristic

Symbol

Units

2560CT

2550CT

25100CT 25150CT 25200CT

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RW^M

V^R

100

150

105

200

140

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current @T_L= 75° C

(Note 1)

25.0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

200

FSM

0.80

0.85

0.92

Forward Voltage

@I_F= 12.5A

0.70

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

0.1

I^RM

350

280

200

°C/W

°C

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 1)

Operating and Storage Temperature Range

1.4

R^ꢀ^JA

T^j, T^STG

-55 to +150

-55 to +175

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

www.senocn.com

MBRS2540CT-MBR25200CT

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