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MBRS190TRPBF_10 PDF预览

MBRS190TRPBF_10

更新时间: 2024-09-23 11:11:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 110K
描述
Schottky Rectifier, 1.0 A

MBRS190TRPBF_10 数据手册

 浏览型号MBRS190TRPBF_10的Datasheet PDF文件第2页浏览型号MBRS190TRPBF_10的Datasheet PDF文件第3页浏览型号MBRS190TRPBF_10的Datasheet PDF文件第4页浏览型号MBRS190TRPBF_10的Datasheet PDF文件第5页浏览型号MBRS190TRPBF_10的Datasheet PDF文件第6页浏览型号MBRS190TRPBF_10的Datasheet PDF文件第7页 
VS-MBRS190TRPbF, VS-MBRS1100TRPbF  
Vishay Semiconductors  
Schottky Rectifier, 1.0 A  
FEATURES  
• Small foot print, surface mountable  
• Low forward voltage drop  
• High frequency operation  
• Guard ring for enhanced ruggedness and long  
term reliability  
Cathode  
Anode  
SMB  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• Compliant to RoHS directive 2002/95/EC  
• Designed and qualified for industrial level  
PRODUCT SUMMARY  
DESCRIPTION  
Package  
DO-214AA (SMB)  
1 A  
The VS-MBRS190TRPbF, VS-MBRS1100TRPbF surface  
mount Schottky rectifier has been designed for applications  
requiring low forward drop and very small foot prints on PC  
boards. Typical applications are in disk drives, switching  
power supplies, converters, freewheeling diodes, battery  
charging, and reverse battery protection.  
IF(AV)  
VR  
90 V, 100 V  
0.78 V  
VF at IF  
IRM  
1 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
Single die  
EAS  
1.0 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
1.0  
UNITS  
Rectangular waveform  
A
V
90/100  
870  
tp = 5 μs sine  
1.0 Apk, TJ = 125 °C  
Range  
A
VF  
0.63  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-MBRS190TRPbF VS-MBRS1100TRPbF  
UNITS  
Maximum DC reverse voltage  
90  
100  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
Maximum average forward current  
IF(AV)  
50 % duty cycle at TL = 147 °C, rectangular waveform  
1.0  
Following any rated load  
condition and with rated  
RRM applied  
5 μs sine or 3 μs rect. pulse  
870  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 0.5 A, L = 8 mH  
50  
V
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
1.0  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.5  
Document Number: 94315  
Revision: 05-Jul-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
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