Datasheet > MBRS10200CS

MBRS10200CS

更新时间： 2024-11-06 18:04:35

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科信 - KEXIN		/
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描述
Schottky Diodes

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中文翻译

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数据手册

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MBRS10200CS 数据手册

SMD Type

Diodes

Schottky Barrier Rectifier

MBRS1040CS ~ MBRS10200CS

TO-263

■ Features

● Low power loss,high efficiency.

High surge capacity

● For use in low voltage,high frequency inverters,

free wheeling,and polarity protection applications.

● Metal silicon junction,majority carrier conduction.

● High current capability,low forward voltage drop.

● Guard ring for over voltage protection.

1.Anode 2.Cathode 3. Anode

■ Absolute Maximum Ratings and Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

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Parameter

Symbol 1040 1045 1050 1060 1080 1090 10100 10150 10200 Unit

100

150

105

150

200

140

200

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

31.5

Maximum DC Blocking Voltage

Maximum average forward rectified current

100

IF(AV)

Peak forward surge current:8.3ms

single half sine-wave superimposed on

rated load (JEDEC method)

IFSM

150

Maximum forward voltage at 5A per leg

0.65

0.72

0.85

0.92

0.1

= 25℃

Maximum DC reverse current

at rated DC blocking voltage

I_R

= 125℃

Typical thermal resistance

Junction Temperature

Storage Temperature

R_θJC

1.4

℃/W

150

-55 to +150

175

℃

-65 to +175

T_stg

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