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MBRM3100 PDF预览

MBRM3100

更新时间: 2024-11-18 22:51:27
品牌 Logo 应用领域
美台 - DIODES 高压
页数 文件大小 规格书
3页 70K
描述
3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITE3

MBRM3100 数据手册

 浏览型号MBRM3100的Datasheet PDF文件第2页浏览型号MBRM3100的Datasheet PDF文件第3页 
MBRM3100  
3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER  
POWERMITEâ3  
DEVELOPMENT  
UNDER  
Features  
·
Guard Ring Die Construction for  
Transient Protection  
·
·
·
Low Power Loss, High Efficiency  
High Reverse Breakdown Voltage  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
POWERMITEâ3  
E
A
Min  
4.03  
6.40  
Max  
4.09  
6.61  
Dim  
A
G
P
3
B
·
Plastic Material: UL Flammability  
Classification Rating 94V-0  
C
.889 NOM  
1.83 NOM  
1.10 1.14  
.178 NOM  
H
J
D
B
Mechanical Data  
E
G
H
1
2
·
·
Case: POWERMITEâ3, Molded Plastic  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Moisture sensitivity: Level 1 per J-STD-020A  
Polarity: See Diagram  
Marking: See Sheet 3  
5.01  
5.17  
4.43  
M
J
4.37  
D
K
·
·
·
·
K
.178 NOM  
C
C
L
L
.71  
.36  
.77  
.46  
M
P
PIN 1  
PIN 2  
Weight: 0.072 grams (approx.)  
PIN 3, BOTTOMSIDE  
HEAT SINK  
1.73  
1.83  
All Dimensions in mm  
Note:  
Pins 1 & 2 must be electrically  
connected at the printed circuit board.  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Value  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
100  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
70  
3
V
A
Average Rectified Output Current  
(See also Figure 5)  
Non-Repetitive Peak Forward Surge Current  
IFSM  
8.3ms Single half sine-wave Superimposed on Rated Load  
50  
A
(JEDEC Method)  
@ TC = 90°C  
RqJS  
RqJC  
Tj  
Typical Thermal Resistance Junction to Soldering Point  
Typical Thermal Resistance Junction to Case  
Operating Temperature Range  
3.5  
°C/W  
°C/W  
°C  
1.6  
-55 to +125  
-55 to +150  
TSTG  
Storage Temperature Range  
°C  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Min  
Typ  
Max  
Unit  
Characteristic  
Symbol  
Test Condition  
V(BR)R  
IR = 0.2mA  
Reverse Breakdown Voltage (Note 1)  
100  
¾
¾
V
IF = 3A, Tj = 25°C  
IF = 3A, Tj = 100°C  
IF = 6A, Tj = 25°C  
IF = 6A, Tj = 100°C  
¾
¾
¾
¾
0.72  
0.60  
0.79  
0.68  
0.76  
¾
¾
VF  
Forward Voltage (Note 1)  
V
¾
mA Tj = 25°C, VR = 100V  
mA Tj = 100°C, VR = 100V  
¾
¾
2
100  
20  
IR  
Reverse Current (Note 1)  
Total Capacitance  
0.5  
CT  
f = 1.0MHz, VR = 4.0V DC  
pF  
¾
85  
¾
Notes:  
1. Short duration test pulse used to minimize self-heating effect.  
DS30354 Rev. 3 - 1  
1 of 3  
www.diodes.com  
MBRM3100  

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