MBRF830-MBRF8100
Schottky Barrier Rectifiers
VOLTAGE RANGE: 30 - 100 V
CURRENT: 8.0 A
ITO-220AC
Features
4.5± 0.2
+0.2
-0.1
10.2± 0.2
3.1
High surge capacity.
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications.
111
Metal silicon junction, majority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
PIN
1
2
4.0± 0.3
1.4± 0.1
0.6± 0.1
2.6± 0.2
Mechanical Data
Case:JEDEC ITO-220AC,molded plastic body
0.6± 0.1
5.0± 0.1
Polarity: As marked
Position: Any
Weight:0.056 ounces,1.587 gram
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified.
Ratings at 25
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF
UNITS
830
835
840 845
850
860
880 8100
Maximum recurrent peak reverse voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
30
35
40
28
40
45
32
45
50
60
80
56
80
100
70
V
V
V
21
25
35
42
Maximum DC blocking voltage
30
35
50
60
100
Maximum average forw ard total device11111111
IF(AV)
IFSM
8.0
A
A
m rectified current @TC = 125°C
Peak forw ard surge current 8.3ms single half
150
b
sine-w ave superimposed on rated load
)
)
Maximum forw ard
voltage
(IF=8.0A,TC=125
0.57
0.70
-
(I
0.80
0.95
0.85
-
F=8.0A,TC=25
0.70
0.84
V
VF
IF=16A,TC=25
(Note 1)
(
)
Maximum reverse current
at rated DC blocking voltage
@TC=25
0.1
15
0.5
50
IR
m A
@TC=125
Maximum thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
3.0
RθJC
TJ
K/W
- 55 ---- + 150
- 55 ---- + 150
TSTG
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance f rom junction to case.
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