Datasheet > MBRF535

MBRF535

更新时间： 2022-02-26 11:12:47

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DSK		/
页数	文件大小	规格书
2页	221K
描述
SCHOTTKY BARRIER RECTIFIERS

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MBRF535 数据手册

Diode Semiconductor Korea

MBRF530 - - - MBRF5100

VOLTAGE RANGE: 30 - 100 V

SCHOTTKY BARRIER RECTIFIERS

CURRENT: 5.0 A

FEATURES

High surge capacity.

ITO-220AC

4.5± 0.2

For use in low voltage, high frequency inverters, free

111wheeling, and polarity protection applications.

+0.2

10.2± 0.2

3.1

-0.1

Metal silicon junction, majority carrier conduction.

High current capacity, low forward voltage drop.

The plastic material carries U/L recognition 94V-0

MECHANICAL DATA

4.0± 0.3

2.6± 0.2

Case:JEDEC ITO-220AC,molded plastic body

Terminals:Solderable per MIL-STD-750,

1.4± 0.1

0.6± 0.1

1 1

Method 2026

Polarity: As marked

Position: Any

0.6± 0.1

5.0± 0.1

Dimensions in millimeters

Weight: 0.056 ounces,1.587 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

ambient temperature unless otherwise specified.

Ratings at 25

Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.

MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF

UNITS

530

535

540 545

550

560

580 5100

Maximum recurrent peak reverse voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

Maximum DC blocking voltage

100

Maximum average forw ard total device11111111

I_F(AV)

I_FSM

5.0

m rectified current @T_C= 125°C

Peak forw ard surge current 8.3ms single half

125

sine-w ave superimposed on rated load

Maximum forw ard

voltage

)

0.80

0.85

_F=5.0A

0.70

V_F

(Note 1)

Maximum reverse current

at rated DC blocking voltage

@T_A=25

0.1

I_R

m A

@T_A=100

Maximum thermal resistance (Note 2)

Operating junction temperature range

Storage temperature range

3.0

K/W

θJC

- 55 ---- + 150

T_J

T_STG

NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.

2. Thermal resistance f rom junction to case.

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