Datasheet > MBRF30080

MBRF30080

更新时间： 2022-02-26 11:08:01

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	467K
描述
Silicon Power Schottky Diode

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数据手册

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MBRF30080 数据手册

MBRF30045 thru MBRF300100R

V_RRM= 45 V - 100 V

I_F(AV)= 300 A

Silicon Power

Schottky Diode

Features

• High Surge Capability

• Types from 45 V to 100 V V_RRM

TO-244AB Package

• Not ESD Sensitive

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

MBRF30080(R) MBRF300100(R)

Parameter

Symbol

MBRF30045(R) MBRF30060(R)

Unit

Repetitive peak reverse

voltage

V_RRM

100

V_RMS

V_DC

T_j

RMS reverse voltage

DC blocking voltage

Operating temperature

Storage temperature

100

-55 to 150

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

T_C= 125 °C

MBRF30080(R) MBRF300100(R)

Parameter

Symbol

I_F(AV)

MBRF30045(R) MBRF30060(R)

Unit

Average forward current

(per pkg)

300

Peak forward surge current

(per leg)

I_FSM

t_p= 8.3 ms, half sine

2000

Maximum forward voltage

(per leg)

V_F

I_R

_FM= 150 A, T_j= 25 °C

0.84

0.70

0.75

T_j= 25 °C

T_j= 100 °C

T_j= 150 °C

Reverse current at rated DC

blocking voltage (per leg)

Thermal characteristics

Thermal resistance, junction-

case (per leg)

R_ΘJC

0.40

°C/W

www.genesicsemi.com/silicon-products/schottky-rectifiers/

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