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MBRF2045CT PDF预览

MBRF2045CT

更新时间: 2024-02-07 20:04:00
品牌 Logo 应用领域
竹懋 - CITC 局域网二极管
页数 文件大小 规格书
3页 99K
描述
20A High Power Schottky Barrier Rectifiersnull

MBRF2045CT 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.36Is Samacsys:N
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.72 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:150 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:20 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:45 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBRF2045CT 数据手册

 浏览型号MBRF2045CT的Datasheet PDF文件第2页浏览型号MBRF2045CT的Datasheet PDF文件第3页 
MBRF2040CT THRU MBRF20200CT  
20A High Power Schottky Barrier Rectifiers  
Features  
Outline  
Low power loss, high efficiency.  
ITO-220AB  
High current capability, low forward voltage drop.  
High surge capability.  
Guardring for overvoltage protection.  
Ultra high-speed switching.  
0.189(4.80)  
0.165(4.20)  
0.130(3.30)  
0.408(10.36)  
0.382(9.70)  
0.098(2.50)  
Silicon epitaxial planar chip, metal silicon junction.  
Suffix "G" indicates Halogen-free part, ex.MBRF2040CTG.  
Lead-free parts meet environmental standards of  
MIL-STD-19500 /228  
0.600(15.5)  
0.580(14.5)  
0.138(3.50)  
MAX  
Marking code  
0.339(8.60)  
0.315(8.00)  
1
2
3
0.055(1.4)  
0.039(1.0)  
0.114(2.90)  
0.098(2.50)  
0.171(4.35)MAX  
0.067(1.7)  
0.039(1.0)  
0.512(13.0)  
MIN  
Mechanical data  
0.035(0.90)  
0.012(0.30)  
Epoxy : UL94-V0 rated flame retardant.  
Case : JEDEC ITO-220AB molded plastic body over  
passivated chip.  
0.110(2.80)  
0.091(2.30)  
0.031(0.80)MAX  
Lead : Axial leads, solderable per MIL-STD-202,  
Method 208 guranteed.  
PIN 1  
PIN 3  
PIN 2  
Polarity: Color band denotes cathode end.  
Mounting Position : Any.  
Dimensions in inches and (millimeters)  
Weight : Approximated 2.25 gram.  
Maximum ratings and electrical characteristics  
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Parameter  
Conditions  
Symbol  
IO  
MIN.  
TYP.  
MAX.  
20  
UNIT  
A
Forward rectified current  
See Fig.1  
8.3ms single half sine-wave superimposed on  
rate load (JEDEC method)  
Forward surge current  
IFSM  
150  
A
VR = VRRM TA = 25OC  
VR = VRRM TA = 125OC  
0.1  
10  
IR  
Reverse current  
mA  
CJ  
Diode junction capacitance  
Thermal resistance  
f=1MHz and applied 4V DC reverse voltage  
Junction to ambient  
150  
30  
pF  
OC/W  
OC  
RθJA  
TSTG  
Storage temperature  
-55  
+175  
Max.  
Max.  
Max.  
Max.  
RMS voltage  
VRMS (V)  
Max. DC  
blocking voltage  
VR (V)  
Operating  
temperature  
TJ (OC)  
forward voltage  
forward voltage  
repetitive peak  
reverse voltage  
VRRM (V)  
Symbol  
Marking code  
@10A, TA = 25OC @10A, TA = 125OC  
VF (V)  
VF (V)  
MBRF2040CT MBRF2040CT  
MBRF2045CT MBRF2045CT  
MBRF2060CT MBRF2060CT  
MBRF2065CT MBRF2065CT  
MBRF20100CT MBRF20100CT  
MBRF20150CT MBRF20150CT  
MBRF20200CT MBRF20200CT  
40  
45  
28  
31.5  
42  
40  
45  
0.70  
0.57  
60  
60  
-55 ~ +150  
-55 ~ +175  
0.79  
0.70  
65  
45.5  
70  
65  
100  
150  
200  
100  
150  
200  
0.81  
0.87  
0.90  
0.71  
0.77  
0.80  
105  
140  
Document ID : DS-11K58  
Issued Date : 2010/05/05  
Revised Date : 2012/05/31  
Revision : C2  
1

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