Datasheet > MBRF20100CT

MBRF20100CT

更新时间： 2024-09-22 17:14:59

品牌	Logo	应用领域
德昌 - TC		/
页数	文件大小	规格书
4页	150K
描述
TO-220

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中文翻译

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数据手册

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MBRF20100CT 数据手册

TAK CHEONG^®

SEMICONDUCTOR

20A SCHOTTKY BARRIER DIODE

Full Pack High Voltage Schottky

Rectifier

Specification Features:

High Voltage Wide Range Selection, 100V, 150V & 200V

High Switching Speed Device

Low Forward Voltage Drop

TO-220FP

DEVICE MARKING DIAGRAM

Low Power Loss and High Efficiency

Guard Ring for Over-voltage Protection

High Surge Capability

L = Tak Cheong Logo

xxyy = Monthly Date Code

Line 2 = MBRF

Line 3 = 20xxxCT

Line 4 = Polarity

L xxyy

Line 2

Line 3

Line 4

RoHS Compliant

Matte Tin(Sn) Lead Finish

Terminal Leads Surface is Corrosion Resistant

and can withstand to 260°C Wave Soldering or

per MIL-STD-750, Method 2026.

POLARITY CONFIGURATION

1. Anode

3. Anode

2. Cathode

MAXIMUM RATINGS (Per Leg, unless otherwise specified )

Symbol

Parameter

MBRF20100CT

MBRF20150CT

MBRF20200CT

Units

V_RRM

V_RWM

V_R

Maximum Repetitive Reverse Voltage

Working Peak Reverse Voltage

Maximum DC Reverse Voltage

Average Rectified Forward Current

Per Leg

Per Package

Non-repetitive Peak Forward Surge Current

8.3mS Single Phase @ Rated Load

100

150

200

I_F(AV)

I_FSM

150

T_STG

T_J

Storage Temperature Range

-65 to +150

+150

°C

Operating Junction Temperature

These ratings are limiting values above which the serviceability of the diode may be impaired.

THERMAL CHARACTERISTICS

T_A= 25°C unless otherwise noted

Symbol

Parameter

Maximum Thermal Resistance, Junction-to-Case

Maximum Thermal Resistance, Junction-to-Ambient (per leg)

Value

Units

2.0

°C/W

R_θJC

R_θJA

ELECTRICAL CHARACTERISTICS (Per Diode )

T_A= 25°C unless otherwise noted

MBRF20100CT MBRF20150CT

MBRF20200CT

Test Condition

Symbol

Parameter

Units

(Note 1)

Min

---

Max

200

Min

---

Max

200

Min

---

Max

200

I_R

Reverse Current

Forward Voltage

@ rated V_R

I_F= 10A

μA

0.85

0.95

0.92

1.00

1.25

V_F

---

I_F= 20A

Note/s:

1. Tested under pulse condition of 300μS.

Number: DB-151

March 2010, Revision D

Page 1

12 3 4

中文翻译

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