MBRF10L100CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
MECHANICAL DATA
Case: ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
MBRF10L100CT
SYMBOL
VRRM
UNIT
100
V
V
V
A
Maximum RMS voltage
VRMS
70
Maximum DC blocking voltage
Maximum average forward rectified current
VDC
100
10
IF(AV)
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
IFRM
10
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
IRRM
120
1
A
A
Peak repetitive reverse surge current (Note 1)
TYP
0.73
0.59
0.82
0.66
TYP
MAX
0.76
0.65
0.85
0.71
MAX
Maximum instantaneous forward voltage (Note 2)
IF= 5 A, TJ=25℃
IF= 5 A, TJ=125℃
VF
V
IF= 10 A, TJ=25℃
IF= 10 A, TJ=125℃
Maximum reverse current @ rated VR
TJ=25 ℃
IR
0.3
0.5
20
15
mA
TJ=125 ℃
Voltage rate of change (Rated VR)
Typical thermal resistance
10000
5.5
dV/dt
RθJC
TJ
V/μs
OC/W
OC
Operating junction temperature range
Storage temperature range
- 55 to +150
- 55 to +150
OC
TSTG
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Document Number: D1308014
Version: F13