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MBRF10L100CT-T PDF预览

MBRF10L100CT-T

更新时间: 2024-09-21 01:25:59
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竹懋 - CITC /
页数 文件大小 规格书
3页 512K
描述
10A Trench Schottky Rectifier

MBRF10L100CT-T 数据手册

 浏览型号MBRF10L100CT-T的Datasheet PDF文件第2页浏览型号MBRF10L100CT-T的Datasheet PDF文件第3页 
MBRF10L100CT-T  
10A Trench Schottky Rectifier  
Chip Integration Technology Corporation  
Main Product Characteristics  
Outline  
K
L
ITO-220AB  
IF(AV)  
VRRM  
TJ  
5 X 2A  
Dimensions in inches(millimeters)  
symbol  
A
ØP  
Min  
Max  
100V  
A
B
0.390(9.9)  
0.268(6.8)  
0.583(14.8)  
0.512(13.0)  
0.102(2.6)  
0.101(2.55)  
0.043(1.1)  
0.043(1.1)  
0.020(0.5)  
0.098(2.49)  
0.169(4.3)  
0.112(2.85)  
0.098(2.5)  
0.020(0.5)  
0.130(3.3)  
0.408(10.36)  
0.283(7.2)  
0.598(15.2)  
0.543(13.8)  
0.150(3.8)  
0.112(2.85)  
0.053(1.35)  
0.053(1.35)  
0.028(0.7)  
0.102(2.59)  
0.185(4.7)  
0.128(3.25)  
0.114(2.9)  
0.028(0.7)  
0.134(3.5)  
F
150OC  
0.56V  
B
C
C
D
E
VF(Typ)  
Marking code  
F
G
H
I
M
G
Features  
E
H
J
D
K
Low forward voltage drop.  
Excellent high temperature stability.  
Fast switching capability.  
I
L
M
N
ØP  
J
N
Lead-free parts meet environmental standards of  
MIL-STD-19500 /228  
Alternate  
K
L
Dimensions in inches(millimeters)  
symbol  
A
ØP  
Min  
Max  
A
B
0.383(9.72) 0.404(10.27)  
F
Mechanical data  
0.248(6.3)  
0.571(14.5)  
0.516(13.1)  
-
0.272(6.9)  
0.610(15.5)  
0.547(13.9)  
0.161(4.1)  
0.126(3.2)  
0.051(1.3)  
0.051(1.3)  
0.035(0.9)  
0.105(2.67)  
0.189(4.8)  
0.122(3.1)  
0.117(2.96)  
0.031(0.8)  
0.142(3.6)  
B
C
C
D
E
Epoxy : UL94-V0 rated flame retardant.  
Case : JEDEC ITO-220AB molded plastic body.  
Terminals : Solder plated, solderable per  
MIL-STD-750, Method 2026.  
Polarity: As marked.  
Mounting Position : Any.  
Marking code  
F
0.094(2.4)  
0.039(1.0)  
0.039(1.0)  
0.020(0.5)  
0.095(2.41)  
0.169(4.3)  
0.055(1.4)  
0.091(2.3)  
0.014(0.35)  
0.122(3.1)  
G
H
I
M
G
E
H
J
D
K
I
L
M
N
ØP  
J
N
Weight : Approximated 2.25 gram.  
Dimensions in inches and (millimeters)  
Circuit Diagram  
Maximum ratings and electrical characteristics  
Rating at 25OC ambient temperature unless otherwise specified.  
Parameter  
Conditions  
Symbol  
VRWM  
IO  
MBRF10L100CT-T  
UNIT  
V
Working peak reverse voltage  
Forward rectified current (total device)  
100  
10  
8.3ms single half sine-wave superimposed on  
rate load (JEDEC method)  
IFSM  
150  
A
Peak Forward surge current  
Peak repetitive reverse surge current  
2us-1Khz  
IRRM  
RθJC  
RθJA  
1
8
OC/W  
OC/W  
OC  
Junction to case  
Junction to ambient  
Typical Thermal resistance (per leg)  
50  
Storage temperature  
TSTG  
TJ  
-55 ~ +150  
-55 ~ +150  
OC  
Operating Junction temperature  
Parameter  
Conditions  
IF = 3A, TJ = 25OC  
IF = 5A, TJ = 25OC  
Symbol  
VF  
MIN.  
TYP.  
550  
630  
560  
3
MAX.  
UNIT  
mV  
Instantaneous Forward voltage drop  
(per diode)  
670  
IF = 5A, TJ = 125OC  
Instantaneous Reverse current  
(per diode)  
VR = 100V  
TJ = 25OC  
TJ = 125OC  
50  
25  
uA  
mA  
V
IR  
VR = 100V  
3
Rverse Breakdown Voltage (per diode)  
IR = 0.1mA, TJ = 25OC  
VBR  
100  
Document ID : DS-11KIS  
Revised Date : 2016/08/15  
Revision : C1  
1

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