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MBRF10100CT-4W

更新时间： 2024-01-06 21:33:57
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 691K
描述
High Voltage Trench MOS Barrier Schottky Rectifier

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MBRF10100CT-4W 数据手册

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MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3  
www.vishay.com  
Vishay General Semiconductor  
High Voltage Trench MOS Barrier Schottky Rectifier  
FEATURES  
TMBS®  
• Trench MOS Schottky technology  
TO-220AC  
ITO-220AC  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C (for TO-263AB package)  
2
2
1
1
MBR1090  
MBR10100  
PIN 1  
MBRF1090  
• Solder bath temperature 275 °C maximum, 10 s, per  
JESD 22-B106 (for TO-220AC and ITO-220AC package)  
MBRF10100  
PIN 1  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
CASE  
PIN 2  
PIN 2  
TO-263AB  
K
TYPICAL APPLICATIONS  
For use in high frequency rectifier of switching mode power  
supplies, freewheeling diodes, DC/DC converters or polarity  
protection application.  
2
1
MBRB1090  
MBRB10100  
MECHANICAL DATA  
PIN 1  
K
Case: TO-220AC, ITO-220AC, TO-263AB  
PIN 2  
HEATSINK  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
10 A  
90 V, 100 V  
150 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: As marked  
VF  
0.65 V  
TJ max.  
150 °C  
Mounting Torque: 10 in-lbs maximum  
TO-220AC, ITO-220AC,  
TO-263AB  
Package  
Diode variations  
Single die  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
MBR1090  
MBR10100  
100  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
VRRM  
VRWM  
VDC  
90  
90  
90  
V
V
V
A
100  
Maximum DC blocking voltage  
100  
Maximum average forward rectified current at TC = 133 °C  
IF(AV)  
10  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
EAS  
150  
130  
0.5  
A
mJ  
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH  
Peak repetitive reverse current at tp = 2 μs, 1 kHz,  
TJ = 38 °C 2 °C per diode  
IRRM  
Voltage rate of change (rated VR)  
dV/dt  
VAC  
10 000  
1500  
V/μs  
V
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min  
Operating junction and storage temperature range  
TJ, TSTG  
-65 to +150  
°C  
Revision: 11-Sep-13  
Document Number: 89034  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
123456

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