Datasheet > MBRF10100CT

MBRF10100CT

更新时间： 2024-09-28 11:11:27

品牌	Logo	应用领域
KEC		二极管
页数	文件大小	规格书
2页	41K
描述
SCHOTTKY BARRIER TYPE DIODE

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中文翻译

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数据手册

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MBRF10100CT 数据手册

SEMICONDUCTOR

MBRF10100CT

SCHOTTKY BARRIER TYPE DIODE

TECHNICAL DATA

SWITCHING TYPE POWER SUPPLY APPLICATION.

CONVERTER & CHOPPER APPLICATION.

FEATURES

Average Output Rectified Current

: I_O=10A.

DIM MILLIMETERS

10.16 0.2

15.87 0.2

Repetitive Peak Reverse Voltage

: V_RRM=100V.

2.54 0.2

0.8 0.1

3.18

0.1

Fast Reverse Recovery Time : t_rr=35ns.

3.3 0.1

12.57 0.2

0.5 0.1

13.0 0.5

3.23 0.1

1.47 MAX

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

1.47 MAX

2.54 0.2

SYMBOL

V_RRM

RATING

100

UNIT

6.68 0.2

4.7

0.2

Repetitive Peak Reverse Voltage

Average Output Rectified

1. ANODE

2.76 0.2

2. CATHODE

3. ANODE

I_O

Current (Tc=110 ) (Note)

Peak One Cycle Surge Forward

Current (Non-Repetitive 60Hz)

I_FSM

100

TO-220IS (1)

T_j

Junction Temperature

-40 150

-55 150

T_stg

Storage Temperature Range

Note : average forward current of centertap full wave connection.

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

SYMBOL

V_FM

TEST CONDITION

MIN.

TYP.

MAX.

0.85

UNIT

I_FM=5A

Peak Forward Voltage

(Note)

Repetitive Peak

Reverse Current

I_RRM

V_RRM=Rated

150

(Note)

t_rr

Reverse Recovery Time

I_F=1.0A, di/dt=-30A/

Juction to Case

R_th(j-c)

Thermal Resistance

(Note)

3.5

Note : A value of one cell

2008. 5. 13

Revision No : 2

1/2

中文翻译

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