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MBRD8100CT PDF预览

MBRD8100CT

更新时间: 2024-02-12 20:13:52
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
2页 338K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 100V V(RRM), Silicon, PLASTIC, DPAK-3

MBRD8100CT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DPAK包装说明:R-PSSO-G2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.75其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
最大非重复峰值正向电流:150 A元件数量:2
相数:1端子数量:2
最大输出电流:4 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240认证状态:Not Qualified
最大重复峰值反向电压:100 V表面贴装:YES
技术:SCHOTTKY端子面层:TIN LEAD
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30Base Number Matches:1

MBRD8100CT 数据手册

 浏览型号MBRD8100CT的Datasheet PDF文件第2页 
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
MBRD820CT  
THRU  
MBRD8100CT  
Features  
Plastic package has Underwriters Laboratory Flammability  
Classification 94V-0.  
8 Amp Schottky  
Barrier Rectifier  
20 to 100 Volts  
Metal silicon junction ,majority carrier conduction  
Guard ring for overvoltage protection  
For use in low voltage ,high frequency inverters, free wheeling ,  
and polarity protection applications  
High temperature soldering guaranteed:250 C/10 seconds,  
0.25"(6.35mm)from case  
DPAK  
Maximum Ratings  
S
Operating Temperature: 820CT-840CT: - 65to +125℃  
850CT-8100CT: - 65to +150℃  
Storage Temperature: -65to +150℃  
Max  
V
A
1
G
F
2
B
Max  
RMS  
Max DC  
MCC  
Device  
Peak  
Reverse  
Voltage  
20V  
Blocking  
Voltage  
3
Part Number  
Marking  
Voltage  
D
MBRD820CT  
MBRD830CT  
MBRD840CT  
MBRD850CT  
MBRD860CT  
MBRD880CT  
MBRD820CT  
MBRD830CT  
MBRD840CT  
MBRD850CT  
MBRD860CT  
MBRD880CT  
14V  
21V  
28V  
35V  
42V  
56V  
70V  
20V  
30V  
40V  
50V  
60V  
80V  
100V  
30V  
C
40V  
50V  
60V  
E
J
K
80V  
MBRD8100CT MBRD8100CT  
100V  
1
2
3
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average  
Forward  
4A  
Per Diode  
IF(AV)  
Current  
8A  
Per Device  
DIMENSIONS  
Peak Forward Surge  
Current  
INCHES  
MM  
IFSM  
150A  
8.3ms, half sine  
FM =5A  
DIM  
MIN  
MAX  
0.245  
0.215  
0.094  
0.035  
0.045  
0.265  
MIN  
5.97  
5.21  
2.19  
0.64  
0.99  
6.35  
MAX  
6.22  
5.46  
2.38  
0.89  
1.14  
6.73  
NOTE  
A
B
C
D
E
F
G
J
0.235  
0.205  
0.086  
0.025  
0.035  
0.250  
Maximum Forward  
Voltage*  
I
MBRD820CT-840CT  
MBRD850CT-860CT  
MBRD880CT-8100CT  
VF  
0.65V  
0.75V  
0.85V  
0.090  
2.28  
0.018  
0.020  
0.370  
0.035  
0.023  
---  
0.410  
0.050  
0.48  
0.51  
9.40  
0.88  
0.58  
---  
10.42  
1.27  
K
S
V
Maximum Reverse  
Current At Rated  
Blocking Voltage*  
IR  
TA = 25℃  
TA = 100℃  
TA = 100℃  
MBRD820CT-8100CT  
MBRD820CT-840CT  
MBRD850CT-8100CT  
1.0mA  
50mA  
25mA  
Square Wave,  
Peak Repetitive  
IFRM  
20A  
Forward Current  
20 KHz, T =105  
C
2.5/W  
Thermal Resistance  
R
-------  
JC  
*Pulse test: Pulse width 300 µsec, Duty cycle 1%  
www.mccsemi.com  
Revision: 1  
2005/09/16  

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