Datasheet > MBRD580S

MBRD580S

更新时间： 2023-12-06 20:02:19

品牌	Logo	应用领域
WON-TOP		/
页数	文件大小	规格书
4页	43K
描述
SMD

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MBRD580S 数据手册

MBRD520/S – MBRD5100/S

5.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

WON-TOP ELECTRONICS

Features



Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection



High Surge Current Capability

Low Power Loss, High Efficiency

Ideally Suited for Automatic Assembly

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

PIN 1

DPAK/TO-252

Min

Mechanical Data

Dim

Max

6.70

5.55

2.50

1.25

6.20

3.40

0.90

0.60

1.60

0.55

6.05



Case: DPAK/TO-252, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

5.05

PIN 1

2.10

PIN 3

Case, PIN 2

(MBRD520 Series)

1.05



Polarity: See Diagram

Weight: 0.3 grams (approx.)

Mounting Position: Any

Marking: Device Code, See Page 3

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

5.48

2.55

0.55

PIN 3

Case, PIN 2

(MBRD520S Series)

0.40

0.95

0.45

2.30 Typical

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

MBRD MBRD MBRD MBRD MBRD MBRD MBRD

Characteristic

Symbol

Unit

520/S 530/S 540/S 550/S 560/S 580/S 5100/S

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current @T_C= 125°C

5.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on

Rated Load (JEDEC Method)

IFSM

Forward Voltage

@I_F= 5.0A

VFM

IRM

0.55

500

0.75

0.85

Peak Reverse Current

At Rated DC Blocking Voltage

@T_J= 25°C

@T_J= 100°C

0.2

Typical Junction Capacitance (Note 1)

380

Thermal Resistance, Junction to Ambient (Note 2)

Thermal Resistance, Junction to Case (Note 2)

RθJA

RθJC

5.0

°C/W

°C

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

2. Mounted on FR-4 PC board with minimum recommended pad layout.

Revision: September, 2019

www.wontop.com

12 3 4

下载PDF

与MBRD580S相关器件

型号	品牌	描述	获取价格	数据表
MBRD580-TP	MCC	暂无描述	获取价格
MBRD580TR	ETC	DIODE SCHOTTKY 80V 5A DPAK	获取价格
MBRD590	MCC	Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 90V V(RRM), Silicon, PLASTIC, DPAK-3	获取价格
MBRD5H100	ONSEMI	Switch-mode Schottky Power Rectifier	获取价格
MBRD5H100_16	ONSEMI	Switch-mode Schottky Power Rectifier	获取价格
MBRD5H100N	Galaxy Microelectronics	5A,100V,Schottky Barrier Rectifiers	获取价格