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MBRD540-TP PDF预览

MBRD540-TP

更新时间: 2024-11-02 13:11:11
品牌 Logo 应用领域
美微科 - MCC 整流二极管瞄准线功效
页数 文件大小 规格书
2页 107K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 40V V(RRM), Silicon, PLASTIC, DPAK-3

MBRD540-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DPAK
包装说明:PLASTIC, DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.72
其他特性:LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:40 V表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10Base Number Matches:1

MBRD540-TP 数据手册

 浏览型号MBRD540-TP的Datasheet PDF文件第2页 
MBRD520  
THRU  
MBRD5100  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
5.0 Amp  
Schottky  
Barrier Rectifier  
20 to 100 Volts  
Features  
·
·
·
·
·
Meatl of Silicon Rectifier, Majority Conducton  
For surface mounted applications  
Low Forward Voltage Drop  
High Current Capability , High Efficiency  
Low Power Loss  
Maximum Ratings  
DPAK  
·
·
Operating Temperature: - 55°C to +1 25 °C  
Storage Temperature: - 65 to +150 °C  
°C  
A
H
I
MCC  
Catalog  
Number  
Maximum  
Reccurrent  
Peak Reverse  
Voltage  
20V  
Maximum Maximum  
RMS  
Voltage  
DC  
Blocking  
Voltage  
20V  
B
C
4
MBRD520  
14 V  
21V  
28V  
35V  
42V  
56V  
70V  
MBRD530  
MBRD540  
MBRD550  
MBRD560  
MBRD580  
MBRD5100  
30V  
40V  
50V  
60V  
80V  
100V  
30V  
40V  
D
J
50V  
60V  
E
2
1
3
K
L
80V  
100V  
F
G
G
2
4
Electrical Characteristics @ 25°C Unless Otherwise Specified  
3
Average Forward  
Current  
IF(AV)  
5A  
TC = 75°C  
Peak Forward Surge  
Current  
Maximum  
IFSM  
100A  
8.3ms, half sine  
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
ꢇ ꢇ ꢇ ꢇ  
INCHES  
ꢂꢁꢄ  
MM  
Instantaneous  
Forward Voltage  
MBRD520-40  
MBRD550-60  
MBRD580-100  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
ꢀꢁꢂ  
A
B
C
D
E
F
G
H
I
ꢂꢈꢉ  
.364  
.216  
.063  
ꢂꢁꢄ  
6.3  
5.1  
1.2  
ꢂꢈꢉ  
6.7  
ꢄꢆꢊꢃ  
.248  
.200  
.047  
.209  
.090  
5.5  
1.6  
5.7  
2.7  
0.8  
VF  
.55V  
.75V  
.85V  
IFM = 5A;  
TJ = 25°C  
.225  
.106  
5.3  
2.3  
.012  
.032  
0.3  
.090  
.020  
2.3  
0.5  
.082  
.016  
.040  
.098  
2.1  
2.5  
0.6  
---  
.024  
---  
0.4  
1.0  
IR  
0.2mA  
20mA  
TA = 25°C  
TA = 100°C  
J
K
L
.051  
.071  
1.3  
1.8  
*Pulse Test: Pulse Width 300msec, Duty Cycle 2%  
www.mccsemi.com  

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