Datasheet > MBRD1050CT

MBRD1050CT

更新时间： 2024-09-10 18:04:35

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科信 - KEXIN		/
页数	文件大小	规格书
3页	324K
描述
Schottky Diodes

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中文翻译

获取价格

数据手册

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MBRD1050CT 数据手册

SMD Type

Diodes

Schottky Barrier Rectifier

MBRD1040CT ~ MBRD10200CT

TO-252

■ Features

● Low power loss,high efficiency.

High surge capacity

● For use in low voltage,high frequency inverters,

free wheeling,and polarity protection applications.

● Metal silicon junction,majority carrier conduction.

● High current capability,low forward voltage drop.

● Guard ring for over voltage protection.

1.Anode 2.Cathode 3. Anode

■ Absolute Maximum Ratings and Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

MBRD MBRD MBRD MBRD MBRD MBRD MBRD MBRD MBRD

Parameter

Symbol 1040 1045 1050 1060 1080 1090 10100 10150 10200 Unit

100

150

105

150

200

140

200

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

31.5

Maximum DC Blocking Voltage

Maximum average forward rectified current

100

IF(AV)

Peak forward surge current:8.3ms

single half sine-wave superimposed on

rated load (JEDEC method)

IFSM

150

Maximum forward voltage at 5A per leg

0.65

0.72

0.85

0.92

0.1

= 25℃

Maximum DC reverse current

at rated DC blocking voltage

I_R

= 125℃

Typical thermal resistance

Junction Temperature

Storage Temperature

R_θJC

1.4

℃/W

150

-55 to +150

175

℃

-65 to +175

T_stg

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