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MBRD10150CT PDF预览

MBRD10150CT

更新时间: 2024-11-19 14:54:11
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SMD

MBRD10150CT 数据手册

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®
MBRD10150CT – MBRD10200CT  
10A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Schottky Barrier Chip  
A
B
C
J
Guard Ring Die Construction for  
Transient Protection  
High Surge Current Capability  
Low Power Loss, High Efficiency  
Ideally Suited for Automatic Assembly  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
D
E
PIN 1  
2
3
K
G
H
L
P
P
DPAK/TO-252  
Min  
Mechanical Data  
Dim  
A
B
C
D
E
Max  
6.70  
5.55  
2.50  
1.25  
6.20  
3.40  
0.90  
0.60  
1.60  
0.55  
6.05  
Case: DPAK/TO-252, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
5.05  
PIN 1  
PIN 3  
2.10  
Case, PIN 2  
1.05  
Polarity: See Diagram  
Weight: 0.3 grams (approx.)  
Mounting Position: Any  
Marking: Device Code, See Page 3  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
5.48  
G
H
J
2.55  
0.55  
0.40  
K
L
0.95  
0.45  
P
2.30 Typical  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
MBRD10150CT  
MBRD10200CT  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
150  
105  
200  
140  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TC = 115°C  
Total Device  
Per Diode  
10  
5.0  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
100  
A
V
Forward Voltage per diode  
@IF = 5.0A  
VFM  
IRM  
CJ  
0.92  
Peak Reverse Current  
@TJ = 25°C  
10  
10  
µA  
mA  
At Rated DC Blocking Voltage  
@TJ = 125°C  
Typical Junction Capacitance (Note 1)  
200  
pF  
°C/W  
°C  
Thermal Resistance Junction to Ambient (Note 2)  
Thermal Resistance Junction to Case (Note 2)  
RθJA  
RθJC  
70  
2.5  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
2. Mounted on FR-4 PCB with minimum recommended pad layout per diode.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2019  
www.wontop.com  
1

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