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MBRB3045CT-1G PDF预览

MBRB3045CT-1G

更新时间： 2024-01-08 04:37:34
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管开关
页数 文件大小 规格书
5页 128K
描述
SWITCHMODE? Power Rectifier

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中文翻译

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MBRB3045CT-1G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：End Of Life零件包装代码：TO-262AA
包装说明：LEAD FREE, PLASTIC, MODIFIED TO-262, 3 PIN针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.63
Is Samacsys：N其他特性：HIGH RELIABILITY, FREE WHEELING DIODE
应用：GENERAL PURPOSE外壳连接：CATHODE
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.6 V
JEDEC-95代码：TO-262AAJESD-30 代码：R-PSIP-T3
JESD-609代码：e3最大非重复峰值正向电流：200 A
元件数量：2相数：1
端子数量：3最高工作温度：150 °C
最低工作温度：-65 °C最大输出电流：15 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT APPLICABLE
认证状态：Not Qualified最大重复峰值反向电压：45 V
子类别：Rectifier Diodes表面贴装：NO
技术：SCHOTTKY端子面层：MATTE TIN
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT APPLICABLEBase Number Matches：1

MBRB3045CT-1G 数据手册

 浏览型号MBRB3045CT-1G的Datasheet PDF文件第2页浏览型号MBRB3045CT-1G的Datasheet PDF文件第3页浏览型号MBRB3045CT-1G的Datasheet PDF文件第4页浏览型号MBRB3045CT-1G的Datasheet PDF文件第5页 
MBR3045ST,  
MBRB3045CT-1  
SWITCHMODE™  
Power Rectifier  
Features and Benefits  
• Dual Diode Construction — Terminals 1 and 3 May Be Connected  
for Parallel Operation at Full Rating  
• 45 V Blocking Voltage  
http://onsemi.com  
• Low Forward Voltage Drop  
SCHOTTKY BARRIER  
RECTIFIER  
• 175°C Operating Junction Temperature  
• Pb−Free Packages are Available  
Applications  
30 AMPERES  
45 VOLTS  
• Power Supply − Output Rectification  
• Power Management  
• Instrumentation  
Mechanical Characteristics  
3
2, 4  
• Case: Epoxy, Molded  
1
• Weight (Approximately): 1.9 Grams (TO−220AB)  
1.5 Grams (TO−262)  
• Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
MARKING  
DIAGRAMS  
• Lead Temperature for Soldering Purposes:  
4
260°C Max. for 10 Seconds  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
MAXIMUM RATINGS  
TO−220AB  
CASE 221A  
STYLE 6  
AYWW  
B3045G  
AKA  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
45  
V
RRM  
V
RWM  
1
V
R
2
3
Average Rectified Current  
(T = 130°C)  
C
Per Device  
Per Diode  
I
30  
15  
A
A
A
F(AV)  
4
Peak Repetitive Forward Current, per Diode  
I
30  
FRM  
AYWW  
B3045CTG  
AKA  
2
I PAK (TO−262)  
CASE 418D  
PLASTIC  
(Square Wave, V = 45 V, 20 kHz)  
R
Non−Repetitive Peak Surge Current (Surge  
Applied at Rated Load Conditions,  
Halfwave, Single Phase, 60 Hz)  
I
150  
FSM  
Peak Repetitive Reverse Current, per Diode  
(2.0 ms, 1.0 kHz)  
I
2.0  
A
°C  
RRM  
1
2
3
A
Y
= Assembly Location  
= Year  
Storage Temperature Range  
T
−65 to  
stg  
WW  
AKA  
G
= Work Week  
= Polarity Designator  
= Pb−Free Device  
+175  
Operating Junction Temperature (Note 1)  
T
−65 to  
°C  
J
+175  
Peak Surge Junction Temperature  
(Forward Current Applied)  
T
175  
°C  
J(pk)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
Voltage Rate of Change (Rated V )  
dv/dt  
10,000  
V/ms  
R
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. The heat generated must be less than the thermal conductivity from  
Junction−to−Ambient: dP /dT < 1/R .  
q
JA  
D
J
©
Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
May, 2008 − Rev. 7  
MBR3045ST/D  
 
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中文翻译

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MBRB3045CT-1G 替代型号

型号 品牌 替代类型 描述 数据表
SBRB2545CTG ONSEMI

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