Datasheet > MBR730_1

MBR730_1

更新时间： 2024-01-12 14:51:14

品牌	Logo	应用领域
美台 - DIODES		/
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描述
7.5A SCHOTTKY BARRIER RECTIFIER

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中文翻译

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数据手册

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MBR730_1 数据手册

MBR730 - MBR760

7.5A SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

TO-220AC

Low Power Loss, High Efficiency

Dim

Min

14.48

10.00

2.54

5.90

2.80

12.70

0.69

3.54

4.07

1.15

0.30

2.04

4.83

Max

15.75

10.40

3.43

6.40

3.93

14.27

0.93

3.78

4.82

1.39

0.50

2.79

5.33

High Surge Capability

High Current Capability and Low Forward Voltage Drop

For Use in Low Voltage, High Frequency Inverters, Free

Wheeling, and Polarity Protection Application

Lead Free Finish, RoHS Compliant (Note 4)

Mechanical Data

Pin 1

Pin 2

Case: TO-220AC

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Finish – Bright Tin. Solderable per

MIL-STD-202, Method 208

Pin 1 +

Pin 2 -

Polarity: See Diagram

Case

Marking: Type Number

Weight: 2.3 grams (approx.)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MBR

730

MBR

735

MBR

740

MBR

745

MBR

750

MBR

760

Characteristic

Symbol

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_O

RMS Reverse Voltage

24.5

31.5

Average Rectified Output Current

(Note 1)

7.5

@ T_C= 125°C

Non-Repetitive Peak Forward Surge Current 8.3ms

single half sine-wave superimposed on rated load

(JEDEC Method)

I_FSM

150

Forward Voltage Drop

(Note 3)

@ I_F= 7.5A, T_J= 25°C

0.75

0.65

@ I_F= 7.5A, T_J= 125°C

@ I_F= 15A, T_J= 25°C

@ I_F= 15A, T_J= 125°C

0.57

0.84

0.72

V_FM

Peak Reverse Current

at Rated DC Blocking Voltage

@ T_J= 25°C

@ T_J= 125°C

0.1

0.5

I_RM

C_T

R_qJc

dV/dt

T_j

Typical Total Capacitance (Note 2)

400

3.5

°C/W

V/ms

°C

Typical Thermal Resistance Junction to Case (Note 1)

Voltage Rate of Change (Rated V_R)

Operating Temperature Range

10,000

-55 to +150

-55 to +175

T_STG

Storage Temperature Range

°C

Notes:

1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

3. Short duration test pulse used to minimize self-heating effect.

4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.

DS23007 Rev. 9 - 2

1 of 3

MBR730-MBR760

www.diodes.com

ã Diodes Incorporated

12 3

中文翻译

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与MBR730_1相关器件

型号	品牌	获取价格	描述	数据表
MBR730-B	MCC	获取价格	Rectifier Diode,
MBR730-BP-HF	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 7.5A, 30V V(RRM), Silicon, TO-220AC,
MBR735	ONSEMI	获取价格	SWITCHMODEâ¢ Power Rectifiers
MBR735	FAIRCHILD	获取价格	7.5 Ampere Schottky Barrier Rectifiers
MBR735	MOTOROLA	获取价格	SWITCHMODE⑩ Power Rectifier
MBR735	VISHAY	获取价格	SCHOTTKY RECTIFIER
MBR735	DIODES	获取价格	7.5A SCHOTTKY BARRIER RECTIFIER
MBR735	MCC	获取价格	7.5 Amp Schottky Barrier Rectifier 20 to 60 Volts
MBR735	KERSEMI	获取价格	Plastic material used carries Underwriters Laboratory Classifications 94V-0
MBR735	DIGITRON	获取价格	Rectifier, Schottky; Max Peak Repetitive Reverse Voltage: 7.5; Max TMS Bridge Input Voltag

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