MBR730 - MBR760
7.5A SCHOTTKY BARRIER RECTIFIER
Features
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
TO-220AC
·
·
·
·
Low Power Loss, High Efficiency
Dim
A
B
C
D
E
Min
14.48
10.00
2.54
5.90
2.80
12.70
0.69
3.54
4.07
1.15
0.30
2.04
4.83
Max
15.75
10.40
3.43
6.40
3.93
14.27
0.93
3.78
4.82
1.39
0.50
2.79
5.33
L
High Surge Capability
B
M
High Current Capability and Low Forward Voltage Drop
C
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
D
E
K
·
Lead Free Finish, RoHS Compliant (Note 4)
A
G
J
Mechanical Data
Pin 1
Pin 2
·
·
Case: TO-220AC
K
L
G
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
J
N
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
M
N
P
R
Terminals: Finish – Bright Tin. Solderable per
MIL-STD-202, Method 208
P
+
Pin 1 +
Pin 2 -
·
·
·
Polarity: See Diagram
R
Case
Marking: Type Number
Weight: 2.3 grams (approx.)
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MBR
730
MBR
735
MBR
740
MBR
745
MBR
750
MBR
760
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
30
21
35
40
28
45
50
35
60
42
V
VR(RMS)
IO
RMS Reverse Voltage
24.5
31.5
V
A
Average Rectified Output Current
(Note 1)
7.5
@ TC = 125°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
150
A
Forward Voltage Drop
(Note 3)
@ IF = 7.5A, TJ = 25°C
¾
0.75
0.65
¾
@ IF = 7.5A, TJ = 125°C
@ IF = 15A, TJ = 25°C
@ IF = 15A, TJ = 125°C
0.57
0.84
0.72
VFM
V
¾
Peak Reverse Current
at Rated DC Blocking Voltage
@ TJ = 25°C
@ TJ = 125°C
0.1
15
0.5
50
IRM
mA
CT
RqJc
dV/dt
Tj
Typical Total Capacitance (Note 2)
400
3.5
pF
°C/W
V/ms
°C
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated VR)
Operating Temperature Range
10,000
-55 to +150
-55 to +175
TSTG
Storage Temperature Range
°C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Short duration test pulse used to minimize self-heating effect.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
DS23007 Rev. 9 - 2
1 of 3
MBR730-MBR760
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