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MBR730-B PDF预览

MBR730-B

更新时间: 2024-02-13 06:20:49
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 394K
描述
Rectifier Diode,

MBR730-B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.61JESD-609代码:e0
端子面层:Tin/Lead (Sn/Pb)

MBR730-B 数据手册

 浏览型号MBR730-B的Datasheet PDF文件第2页浏览型号MBR730-B的Datasheet PDF文件第3页 
M C C  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
MBR720  
THRU  
MBR760  
Micro Commercial Components  
Features  
·
·
·
·
Metal of siliconrectifier, majonty carrier conducton  
Guard ring for transient protection  
Low power loss high efficiency  
7.5 Amp  
Schottky Barrier  
Rectifier  
High surge capacity, High current capability  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
20 to 60 Volts  
Maximum Ratings  
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +175°C  
TO-220AC  
Microsemi  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
20V  
Maximum Maximum  
B
L
M
RMS  
DC  
C
Voltage  
Blocking  
Voltage  
D
A
K
E
F
MBR720  
MBR730  
MBR735  
MBR740  
MBR745  
MBR760  
MBR720  
MBR730  
MBR735  
MBR740  
MBR745  
MBR760  
14V  
21V  
24.5V  
28V  
31.5V  
42V  
20V  
30V  
35V  
40V  
45V  
60V  
PIN  
1
2
30V  
35V  
40V  
45V  
G
I
60V  
J
H
N
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
7.5A  
TC = 125°C  
PIN 1  
PIN 2  
CASE  
Peak Forward Surge  
Current  
IFSM  
150A  
8.3ms, half sine  
Maximum Forward  
Voltage Drop Per  
Element  
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
VF  
ꢀ ꢀ ꢀ ꢀ  
INCHES  
ꢃꢂꢄ  
MM  
ꢁꢂꢃ  
A
B
C
D
E
F
G
H
I
ꢃꢅꢆ  
ꢃꢂꢄ  
14.22  
9.65  
ꢃꢅꢆ  
15.88  
10.67  
3.43  
6.86  
10.67  
6.35  
14.73  
5.33  
1.14  
0.64  
ꢄꢇꢈꢉ  
.84V  
.75V  
IFM = 15 A mper  
IFM = 7.5 A mper  
TA = 25°C*  
MBR720-745  
.560  
.380  
.100  
.230  
.380  
------  
.500  
.190  
.020  
.012  
.139  
.140  
.045  
.080  
.625  
.420  
.135  
MBR760  
2.54  
.270  
.420  
5.84  
9.65  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
.250  
.580  
------  
12.70  
.210  
4.83  
.045  
.025  
0.51  
0.30  
J
K
L
M
Voltage  
IR  
0.1mA TJ = 25°C  
0.5mA  
15mA  
50mA  
.161  
3.53  
4.09  
4.83  
1.40  
MBR720-745  
.190  
.055  
3.56  
1.14  
MBR760  
MBR720-745  
MBR760  
TJ = 125°C  
N
.115  
2.03  
2.92  
Typical Junction  
Capacitance  
CJ  
400pF Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www.mccsemi.com  
1 of 3  
Revision: 4  
2006/05/30  

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