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MBR560 PDF预览

MBR560

更新时间: 2024-01-02 21:16:31
品牌 Logo 应用领域
SIRECTIFIER 二极管
页数 文件大小 规格书
2页 132K
描述
肖特基势垒二极管Schottky Barrier Diodes,高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes,Tj = -65°C ~ 175°C, Tjm = 175°C。

MBR560 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:R-PDSO-F3Reach Compliance Code:compliant
风险等级:5.68Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.67 VJEDEC-95代码:TO-277A
JESD-30 代码:R-PDSO-F3最大非重复峰值正向电流:120 A
元件数量:1相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大重复峰值反向电压:60 V最大反向电流:150 µA
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

MBR560 数据手册

 浏览型号MBR560的Datasheet PDF文件第2页 
MBR560  
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers  
Dimensions TO-220AC  
Dim.  
Inches  
Min. Max.  
Milimeter  
Min. Max.  
A
C
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
0.500 0.580  
0.560 0.650  
0.380 0.420  
0.139 0.161  
2.300 0.420  
0.100 0.135  
0.045 0.070  
12.70 14.73  
14.23 16.51  
9.66 10.66  
A
C
C(TAB)  
3.54  
5.85  
2.54  
1.15  
-
4.08  
6.85  
3.42  
1.77  
6.35  
0.89  
5.33  
4.82  
0.56  
2.49  
1.39  
A=Anode, C=Cathode, TAB=Cathode  
-
0.250  
0.025 0.035  
0.190 0.210  
0.140 0.190  
0.015 0.022  
0.080 0.115  
0.025 0.055  
0.64  
4.83  
3.56  
0.38  
2.04  
0.64  
VRRM  
V
VRMS  
V
VDC  
V
MBR560  
60  
42  
60  
Symbol  
Characteristics  
Maximum Ratings  
Unit  
I(AV)  
Maximum Average Forward Rectified Current @TC=95oC  
5
A
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave  
Superimposed On Rated Load (JEDEC METHOD)  
IFSM  
VF  
175  
Maximum Forward Voltage At 5.0A DC (Note 1)  
0.70  
V
Maximum DC Reverse Current  
At Rated DC Blocking Voltage  
@TJ=25oC  
0.5  
33  
IR  
mA  
@TJ=100oC  
CJ  
ROJC  
TJ  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Operating Temperature Range  
Storage Temperature Range  
350  
pF  
oC/W  
oC  
3.5  
-55 to +125  
-55 to +150  
TSTG  
oC  
NOTES: 1. 300us Pulse Width, 2% Duty Cycle.  
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.  
3. Thermal Resistance Junction To Case.  
FEATURES  
MECHANICAL DATA  
* Metal of silicon rectifier, majority carrier conducton  
* Guard ring for transient protection  
* Low power loss, high efficiency  
* High current capability, low VF  
* Case: TO-220AC molded plastic  
* Polarity: As marked on the body  
* Weight: 0.08 ounces, 2.24 grams  
* Mounting position: Any  
* High surge capacity  
* For use in low voltage, high frequency inverters, free  
whelling, and polarity protection applications  

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