Datasheet > MBR40H35CT

MBR40H35CT

更新时间： 2024-09-26 12:10:19

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
3页	1139K
描述
Dual rectifier construction, positive center tap

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中文翻译

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数据手册

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MBR40H35CT 数据手册

MBR40H35CT thru MBR40H60CT

Features

• Dual rectifier construction, positive center tap

• Metal silicon junction, majority carrier conduction

• Low power loss, high efficiency

• Guardring for overvoltage protection

• For use in high frequency inverters,

TO-220AB (MBR40HxxCT)

0.398 (10.10)

0.185 (4.70)

0.169 (4.30)

0.382 (8.70)

0.055 (1.40)

0.047 (1.20)

0.150 (3.80)

0.139 (3.54)

free wheeling, and polarity protection applications

0.343 (8.70) Typ.

0.055 (1.40)

0.049 (1.25)

Dia.

0.114 (2.90)

0.106 (2.70)

Mechanical Data

Case: JEDEC TO-220AB molded plastic body

0.154 (3.90)

0.138 (3.50)

0.067

(1.70) Typ.

Terminals: Plated leads, solderable per

MIL-STD-750, Method 2026

High temperature soldering guaranteed:

250°C/10 seconds, 0.25" (6.35mm) from case

Polarity: As marked

Mounting Position: Any

Mounting Torque: 10 in-lbs maximum

Weight: 0.08oz., 2.24g

Epoxy meets UL 94V-0 flammability rating

0.638 (16.20)

0.598 (15.20)

0.634 (16.10)

0.618 (15.70)

0.331 (8.40) Typ.

0.370 (9.40)

0.354 (9.00)

1.161 (29.48)

1.105 (28.08)

0.118

(3.00) Typ.

0.102 (2.60)

0.087 (2.20)

0.523 (13.28)

PIN 1

PIN 3

PIN 2

CASE

0.507 (12.88)

0.035 (0.90)

0.028 (0.70)

Dimensions in inches

and (millimeters)

0.064 (1.62)

0.056 (1.42)

0.200 (5.08) Typ.

0.024 (0.60)

0.018 (0.45)

0.100

(2.54) Typ.

Maximum Ratings ^(T_C= 25°C unless otherwise noted)

MBR40H MBR40H MBR40H MBR40H

Parameter

Symbol

V_RRM

V_RWM

V_DC

35CT

45CT

50CT

60CT

Unit

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

Maximum average forward rectified current Total device

I_F(AV)

(see fig. 1)

Per leg

Peak forward surge current

8.3ms single half sine-wave superimposed

on rated load

I_FSM

350

320

Per leg

Peak repetitive reverse current per leg at t_p= 2µs, 1KH_Z

I_RRM

1.0

Peak non-repetitive reverse surge energy

E_RSM

(8/20µs waveform)

Per leg

Non-repetitive avalanche energy

at 25°C, I_AS= 3.0A, L=5mH

E_AS

22.5

Voltage rate of change (rated V_R)

dv/dt

10,000

V/µs

Operating junction and storage temperature range

T_J, T_STG

–65 to +175

°C

www.kersemi.com

12 3

中文翻译

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与MBR40H35CT相关器件

型号	品牌	获取价格	描述	数据表
MBR40H35CT/45	VISHAY	获取价格	Rectifier Diode, Schottky, 20A, 35V V(RRM),
MBR40H35CT_08	VISHAY	获取价格	Dual Common-Cathode Schottky Rectifiers
MBR40H35CT_15	VISHAY	获取价格	Dual Common Cathode Schottky Rectifiers
MBR40H35CT-E3	VISHAY	获取价格	DIODE 20 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3, Rectifier Diode
MBR40H35CT-E35/45	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 35V V(RRM), Silicon, TO-220AB, ROHS CO
MBR40H35PT	VISHAY	获取价格	Dual Schottky Barrier Rectifier
MBR40H35PT-E3/45	VISHAY	获取价格	DIODE 40 A, 35 V, SILICON, RECTIFIER DIODE, TO-247AD, ROHS COMPLIANT, PLASTIC, TO-3P, 3 PI
MBR40H45CT	KERSEMI	获取价格	Dual rectifier construction, positive center tap
MBR40H45CT	VISHAY	获取价格	Dual Schottky Barrier Rectifiers
MBR40H45CT/45	VISHAY	获取价格	Rectifier Diode, Schottky, 20A, 45V V(RRM),

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