5秒后页面跳转
MBR40H100WT-F PDF预览

MBR40H100WT-F

更新时间: 2024-09-26 11:11:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 139K
描述
High Performance Schottky Generation 5.0, 2 x 20 A

MBR40H100WT-F 数据手册

 浏览型号MBR40H100WT-F的Datasheet PDF文件第2页浏览型号MBR40H100WT-F的Datasheet PDF文件第3页浏览型号MBR40H100WT-F的Datasheet PDF文件第4页浏览型号MBR40H100WT-F的Datasheet PDF文件第5页浏览型号MBR40H100WT-F的Datasheet PDF文件第6页浏览型号MBR40H100WT-F的Datasheet PDF文件第7页 
MBR40H100WT-F  
Vishay High Power Products  
High Performance  
Schottky Generation 5.0, 2 x 20 A  
FEATURES  
• 175 °C high performance Schottky diode  
Base  
common  
cathode  
• Very low forward voltage drop  
4
• Extremely low reverse leakage  
• Optimized VF vs. IR trade off for high efficiency  
• Increased ruggedness for reverse avalanche capability  
• RBSOA available  
• Negligible switching losses  
Anode  
Anode  
2
Common  
cathode  
1
3
• Submicron trench technology  
TO-247AC  
• Fully lead (Pb)-free and RoHS compliant devices  
• Designed and qualified for industrial level  
APPLICATIONS  
• High efficiency SMPS  
• Automotive  
PRODUCT SUMMARY  
IF(AV)  
2 x 20 A  
100 V  
• High frequency switching  
• Output rectification  
• Reverse battery protection  
• Freewheeling  
VR  
Maximum VF at 20 A at 125 °C  
0.67 V  
• Dc-to-dc systems  
• Increased power density systems  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
VRRM  
VF  
CHARACTERISTICS  
VALUES  
100  
UNITS  
V
20 Apk, TJ = 125 °C (typical, per leg)  
Range  
0.63  
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MBR40H100WT-F  
UNITS  
Maximum DC reverse voltage  
VR  
TJ = 25 °C  
100  
V
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 144 °C, rectangular waveform  
VALUES  
UNITS  
per leg  
20  
40  
Maximum average  
forward current  
IF(AV)  
per device  
A
Following any rated load  
condition and with rated  
5 µs sine or 3 µs rect. pulse  
600  
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
10 ms sine or 6 ms rect. pulse  
200  
V
RRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 1.5 A, L = 60 mH  
67.5  
mJ  
A
Limited by frequency of operation and time pulse duration so  
that TJ < TJ max. IAS at TJ max. as a function of time pulse  
See fig. 8  
IAS at  
TJ max.  
Document Number: 94652  
Revision: 10-Dec-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

与MBR40H100WT-F相关器件

型号 品牌 获取价格 描述 数据表
MBR40H100WTG ONSEMI

获取价格

SWITCHMODE⑩ Power Rectifier 100 V, 40 A
MBR40H150CT BL Galaxy Electrical

获取价格

40A,150V,Schottky Barrier Rectifiers
MBR40H35CT VISHAY

获取价格

Dual Schottky Barrier Rectifiers
MBR40H35CT KERSEMI

获取价格

Dual rectifier construction, positive center tap
MBR40H35CT/45 VISHAY

获取价格

Rectifier Diode, Schottky, 20A, 35V V(RRM),
MBR40H35CT_08 VISHAY

获取价格

Dual Common-Cathode Schottky Rectifiers
MBR40H35CT_15 VISHAY

获取价格

Dual Common Cathode Schottky Rectifiers
MBR40H35CT-E3 VISHAY

获取价格

DIODE 20 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3, Rectifier Diode
MBR40H35CT-E35/45 VISHAY

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 35V V(RRM), Silicon, TO-220AB, ROHS CO
MBR40H35PT VISHAY

获取价格

Dual Schottky Barrier Rectifier