Datasheet > MBR40200PTH

MBR40200PTH

更新时间： 2023-12-06 20:03:13

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	761K
描述
Bulk : 360pcs/Box, 1.8K/Ctn;

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MBR40200PTH 数据手册

MBR40200PTH

Features

• Multilayer Metal -Silicon Potential Structure.

• Have Over Voltage Protect Loop，High Reliability.

• Low Voltage High Frequency Invers Circuit.

• Epoxy Meets UL 94 V-0 Flammability Rating

• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix Designates

Compliant. See Ordering Information)

40 Amp

Schottky Barrier

Rectifier

• High Junction Temperature Capability

200 Volts

Maximum Ratings

• Operating Junction Temperature Range: -55⁰C to +175⁰C

• Storage Temperature Range: -55⁰C to +175⁰C

• Typical Thermal Resistance: 1⁰C/W Junction to Case

TO-247

Maximum

Maximum DC

Maximum

RMS

Voltage

MCC

Device

Recurrent

Peak Reverse

Voltage

Blocking

Voltage

Part Number

Marking

MBR40200PTH MBR40200PTH

200V

140V

200V

Electrical Characteristics @ 25°C Unless Otherwise Speciﬁed

Average Rectified

Forward Current

I_F(AV)

40A

T_C=140⁰C

Peak Forward Surge

Current

I_FSM

300A

8.3ms,Half Sine Wave

0.86V(Typ.)

0.90V(Max.)

T_J=25⁰C

I_F=20A;

Instantaneous

Forward Voltage

V_F

T_J=125⁰C

0.80V(Max.)

I_F=20A;

Maximum Reverse

Current at Rated

DC Blocking

0.05mA

T_J=25⁰C

I_R

T_J=125⁰C

20mA

DIMENSIONS

INCHES MM

MIN MAX MIN MAX

Voltage

DIM

NOTE

Note:1. High Temperature Solder Exemptions Applied, see EU Directive Annex 7a.

0.787 0.866 20.00 22.00

0.598 0.638 15.20 16.20

0.185 0.208 4.70 5.30

0.035 0.059 0.90 1.50

0.059 0.094 1.50 2.40

0.067 0.091 1.70 2.30

0.019 0.031 0.48 0.80

0.748 0.833 19.00 21.15

0.122 0.189 3.10 4.80

0.118 0.150 3.00 3.80

0.106 0.134 2.70 3.40

0.197 0.224 5.00 5.70

Internal Structure

PIN 1

PIN 3

PIN 2

CASE

Rev.3-2-12012020

1/3

MCCSEMI.COM

12 3

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