Datasheet > MBR40200PT

MBR40200PT

更新时间： 2024-09-26 07:08:11

品牌	Logo	应用领域
ASEMI		高压
页数	文件大小	规格书
3页	781K
描述
Dual High-Voltage Schottky Rectifiers

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MBR40200PT 数据手册

MBR40200

Dual High-Voltage Schottky Rectifiers

REV:1.08

◆ Half Bridge Rectified、Common Cathode Structure.

◆ Multilayer Metal -Silicon Potential Structure.

◆ Low Power Waste，High Efficiency.

Typical Reference

Data

VRRM= 200V

◆ Beautiful High Temperature Character.

◆ Have Over Voltage protect loop，high reliability.

◆ RoHs Product.

IF(AV)= 40A

● Low Voltage High Frequency Switching Power Supply.

● Low Voltage High Frequency Invers Circuit.

● Low Voltage Continued Circuit and Protection

Circuit.

Polarity

MBR40200

■

Schottky diode,in the manufacture uses the

main process technology includes: Silicon epitaxial

substrate, P+ loop technology,The potential metal and

the silicon alloy technology, the device uses the two

chip, the common cathode, the plastic package structure.

Absolute Maximum Ratings

MBR40200

200

Item

Symbol

VRRM

Maximal Inverted Repetitive Peak Voltage

Maximal DC Interdiction Voltage

Unit

200

VDC

Average Rectified Forward Current TC=150℃

Whole Device

IFAV

Unilateral

Forward Peak Surge Current(Rated Load 8.3 Half

Mssine Wave-According to JEDEC Method)

150

IFSM

Operating Junction Temperature

Storage Temperature

-40- +175

℃

TSTG

Maximum Thermal Resistance Junction−to−Case

℃/W

RθJC

2.0

Electricity Character

Representat

ive

Test Condition

Unit

Item

Minimum

MBR40200

100

TJ =25℃

VR=VRRM

TJ =125℃

TJ =25℃

IF=20A

0.92

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