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MBR40200PT PDF预览

MBR40200PT

更新时间: 2024-11-01 07:08:11
品牌 Logo 应用领域
ASEMI 高压
页数 文件大小 规格书
3页 781K
描述
Dual High-Voltage Schottky Rectifiers

MBR40200PT 数据手册

 浏览型号MBR40200PT的Datasheet PDF文件第2页浏览型号MBR40200PT的Datasheet PDF文件第3页 
MBR40200  
Dual High-Voltage Schottky Rectifiers  
REV:1.08  
◆ Half Bridge Rectified、Common Cathode Structure.  
◆ Multilayer Metal -Silicon Potential Structure.  
◆ Low Power Waste,High Efficiency.  
Typical Reference  
Data  
VRRM= 200V  
◆ Beautiful High Temperature Character.  
◆ Have Over Voltage protect loop,high reliability.  
◆ RoHs Product.  
IF(AV)= 40A  
● Low Voltage High Frequency Switching Power Supply.  
● Low Voltage High Frequency Invers Circuit.  
● Low Voltage Continued Circuit and Protection  
Circuit.  
Polarity  
MBR40200  
Schottky diode,in the manufacture uses the  
main process technology includes: Silicon epitaxial  
substrate, P+ loop technology,The potential metal and  
the silicon alloy technology, the device uses the two  
chip, the common cathode, the plastic package structure.  
Absolute Maximum Ratings  
MBR40200  
200  
Item  
Symbol  
VRRM  
Maximal Inverted Repetitive Peak Voltage  
Maximal DC Interdiction Voltage  
Unit  
200  
VDC  
Average Rectified Forward Current TC=150℃  
Whole Device  
IFAV  
40  
20  
A
A
Unilateral  
Forward Peak Surge Current(Rated Load 8.3 Half  
Mssine Wave-According to JEDEC Method)  
150  
IFSM  
Operating Junction Temperature  
Storage Temperature  
-40- +175  
-40- +175  
TJ  
TSTG  
Maximum Thermal Resistance JunctiontoCase  
℃/W  
RθJC  
2.0  
Electricity Character  
Representat  
ive  
Test Condition  
Unit  
Item  
Minimum  
MBR40200  
100  
1
uA  
mA  
V
TJ =25℃  
IR  
VF  
VR=VRRM  
TJ =125℃  
TJ =25℃  
IF=20A  
0.92  
www.asemi.tw  
Page1  

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