Datasheet > MBR40150FCT

MBR40150FCT

更新时间： 2024-11-18 15:19:27

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
3页	222K
描述
ITO-220AB

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中文翻译

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数据手册

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MBR40150FCT 数据手册

RoHS

MBR40150FCT

COMPLIANT

Schottky Diodes

Features

● High frequency operation

● Low forward voltage drop

● High purity, high temperature epoxy encapsulation for

enhanced mechanical strength and moisture resistance

● Guard ring for enhanced ruggedness and long term reliability

● Solder dip 275 °C max. 7 s, per JESD 22-B106

Typical Applications

Typical applications are in switching power supplies, converters,

freewheeling diodes, and reverse battery protection.

Mechanical Data

●

ackage: ITO-220AB

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant

● Terminals: Tin plated leads, solderable per J-STD-

002 and JESD22-B102

● Polarity: As marked

(T =25℃Unless otherwise specified

■

Maximum Ratings

）

MBR40150FCT

150

PARAMETER

SYMBOL

UNIT

Device marking code

V_RRM

I_O

Repetitive Peak Reverse Voltage

Average Rectified Output Current

@60Hz sine wave, R-load, Tc(FIG.1)

Surge(Non-repetitive)Forward Current

300

600

373

@60Hz half sine-wave, 1 cycle, Tj=25℃

Surge(Non-repetitive)Forward Current

@1ms, square wave, 1 time, Tj=25℃

Current Squared Time

I_FSM

A²s

I²t

@1ms≤t≤8.3ms Tj=25℃，

Measured at 1MHz and

Applied Reverse Voltage of

4.0 V.D.C.

Typical junction

capacitance

410

Storage Temperature

T_stg

℃

-55 ~ +175

Junction Temperature

（T =25℃Unless otherwise specified）

■Electrical Characteristics

Min

Typ

Max

PARAMETER

SYMBOL

UNIT TEST CONDITIONS

I_FM=20.0A

Tj=25℃

0.5

0.815

0.85

Peak Forward Voltage

V_FM

I_FM=20.0A

0.68

0.72

0.1

Tj=125℃

V_RM=V_RRM

Tj=25℃

I_RRM1

I_RRM2

Maximum DC reverse current

at rated DC blocking voltage per

diode

V_RM=V_RRM

Tj=125℃

Note1:Pulse test:300uS pulse widh,1% duty cycle

Note2:Pulse test:pulse widh 40mS

1 / 3

S-B3022

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.1,31-Jul-23

12 3

中文翻译

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