Datasheet > MBR30L150CT

MBR30L150CT

更新时间： 2024-11-07 02:57:03

品牌	Logo	应用领域
纽航 - NIUHANG		局域网功效瞄准线二极管
页数	文件大小	规格书
3页	395K
描述
LOW VF SCHOTTKY RECTIFIERS

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中文翻译

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数据手册

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MBR30L150CT 数据手册

Niu Hang

Electronic Co. Ltd

Specification

For Approval

MBR30L150CT,MBR30L150FCT

LOW VF SCHOTTKY RECTIFIERS

150 Volts

30 Ampers

Marking

TO-220AB

VOLTAGE

CURRENT

FEATURES

ITO-220AB

Power pack

MBR30L150CT

MBR30L150FCT

Metal silicon junction ,majority carrier conduction

Guard ring for overvoltage protection

Low power loss ,high efficiency

High current capability ,low forward voltage drop

High forward surge capability

xxxx

MBR30L150CT

MBR30L150FCT

High frequency operation

Solder bath temperature 275℃ maximum，10s，per JESD22-B106

（for TO-220AB and ITO-220AB package）

Component in accordance to RoHS 2011/65/EU

MECHANICAL DATA

Case: JEDEC TO-220AB、ITO-220AB

Molding compound meets UL94V-0 flammability rating

Terminals: Lead solderable per J-STD-002 and JESD22-B102

Polarity: As marked

2 3

Mounting Torque: 10 in-Ibs maximum

TYPICAL APPLICATIONS

For use in low voltage ,high frequency inverters ,DC/DC

converters,free wheeling ,and polarity protection applications

Maximum Ratings (Ratings at 25℃ ambient temperature unless otherwise specified )

Parameter

Symbol

V _RRM

V _RMS

V _DC

MBR30L150CT,MBR30L150FCT

Unit

Maximum repetitive peak reverse voltage

Maximum RMS voltage

150

106

150

Maximum DC blocking voltage

Per leg

I _F(AV)

I _FSM

I _RRM

Maximum average forward rectified current (see fig.1)

Total device

Peak forward surge current 8.3ms single half sine-wave

superimposed on rated load (JEDEC method at rated TL)

250

T_A=25℃

Peak repetitive reverse current per diode (Note 1)

T_A=100℃

T _STD

T _J

Storage temperature range

Operating junction

-55 to +175

1500

℃

V _AC

Isolation voltage(ITO-220AB only)from terminals to heatsink t=1 min

Electrical Characteristcs (Ratings at 25℃ ambient temperature unless otherwise specified )

Symbol

Test Conditions

Parameter

MIN.

TYP.

MAX. Unit

IF=10.0A

0.68

0.88

0.65

0.75

TA=25℃

IF=15.0A

IF=10.0A

IF=15.0A

TA=25℃

TA=100℃

TA=125℃

Instaneous forward voltage per diode(Note 2)

TA=125℃

I _RRM

Reverse current per diode(Note 1)

Typical junction capacitance(Note 3)

VR=150V

870

C _J

4V,1MHz

Thermal Characteristcs (Ratings at 25℃ ambient temperature unless otherwise specified )

Parameter

Symbol

MBR30L150CT

MBR30L150FCT

Unit

Typical thermal resistance(Note 4)

2.5

4.5

R _θJC

℃/W

Note1.Pulse test: 300 μs pulse width,1% duty cycle

2.Pulse test: pulse width≤40ms

3.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

4.Thermal resistance from junction to lead vertical P.C.B. mounted , 0.375"(9.5mm)lead length

Http://www.nhel.com.cn

Data: 2014/10/20

Rev.: A/1

Page:

12 3

中文翻译

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