Datasheet > MBR3090/3P

MBR3090/3P

更新时间： 2024-02-29 13:08:11

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描述
Dual High-Voltage Schottky Rectifiers

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数据手册

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MBR3090/3P 数据手册

MBR3080 THUR MBR30100

Dual High-Voltage Schottky Rectifiers

REV:1.08

◆ Half Bridge Rectified、Common Cathode Structure.

◆ Multilayer Metal -Silicon Potential Structure.

◆ Low Power Waste，High Efficiency.

Typical Reference

Data

VRRM= 80V

IF(AV)= 30A

◆ Beautiful High Temperature Character.

◆ Have Over Voltage protect loop，high reliability.

◆ RoHs Product.

VRRM= 90V

IF(AV)= 30A

● Low Voltage High Frequency Switching Power Supply.

● Low Voltage High Frequency Invers Circuit.

VRRM= 100V

IF(AV)= 30A

● Low Voltage Continued Circuit and Protection

Circuit.

■ MBR3080、MBR3090、MBR30100 Schottky diode,in the

manufacture uses the main process technology includes:

Silicon epitaxial substrate, P+ loop technology,The

potential metal and the silicon alloy technology, the

device uses the two chip, the common cathode, the

plastic package structure.

Polarity

Absolute Maximum Ratings

MBR30100

Item

Symbol MBR3080 MBR3090

Unit

Maximal Inverted Repetitive Peak Voltage

Maximal DC Interdiction Voltage

VRRM

VDC

100

Average Rectified Forward Current TC=150℃

Whole Device

IFAV

Unilateral

Forward Peak Surge Current(Rated Load 8.3 Half

Mssine Wave-According to JEDEC Method)

150

IFSM

Operating Junction Temperature

Storage Temperature

-40- +175

℃

TSTG

Maximum Thermal Resistance Junction−to−Case

RθJC

2.0

℃/W

Electricity Character

Represent

ative

Test Condition

Item

Minimum

MBR3080 MBR3090 MBR30100 Unit

100

TJ =25℃

VR=VRRM

IF=15A

TJ =125℃

TJ =25℃

0.84

0.88

0.86

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