Datasheet > MBR3045/3P

MBR3045/3P

更新时间： 2024-09-28 07:08:11

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描述
Dual High-Voltage Schottky Rectifiers

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中文翻译

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数据手册

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MBR3045/3P 数据手册

MBR3040 THUR MBR3050

Dual High-Voltage Schottky Rectifiers

REV:1.08

◆ Half Bridge Rectified、Common Cathode Structure.

◆ Multilayer Metal -Silicon Potential Structure.

◆ Low Power Waste，High Efficiency.

Typical Reference

Data

VRRM= 40V

IF(AV)= 30A

◆ Beautiful High Temperature Character.

◆ Have Over Voltage protect loop，high reliability.

◆ RoHs Product.

VRRM= 45V

IF(AV)= 30A

● Low Voltage High Frequency Switching Power Supply.

● Low Voltage High Frequency Invers Circuit.

VRRM= 50V

IF(AV)= 30A

● Low Voltage Continued Circuit and Protection Circuit.

■ MBR3040、MBR3045、MBR3050 Schottky diode,in the

manufacture uses the main process technology includes:

Silicon epitaxial substrate, P+ loop technology,The

potential metal and the silicon alloy technology, the

device uses the two chip, the common cathode, the plastic

half package structure.

Polarity

Absolute Maximum Ratings

MBR3050

Item

Symbol MBR3040 MBR3045

Unit

Maximal Inverted Repetitive Peak Voltage

Maximal DC Interdiction Voltage

VRRM

VDC

Average Rectified Forward Current TC=150℃

Whole Device

IFAV

Unilateral

Forward Peak Surge Current(Rated Load 8.3 Half

Mssine Wave-According to JEDEC Method)

150

IFSM

Operating Junction Temperature

Storage Temperature

-40- +175

℃

TSTG

Maximum Thermal Resistance Junction−to−Case

RθJC

2.0

℃/W

Electricity Character

Representat

ive

Test Condition

Item

Minimum

MBR3040 MBR3045 MBR3050 Unit

500

TJ =25℃

VR=VRRM

IF=15A

TJ =125℃

TJ =25℃

0.68

0.72

0.70

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