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MBR3045/3P PDF预览

MBR3045/3P

更新时间: 2024-11-20 07:08:11
品牌 Logo 应用领域
ASEMI 高压
页数 文件大小 规格书
3页 602K
描述
Dual High-Voltage Schottky Rectifiers

MBR3045/3P 数据手册

 浏览型号MBR3045/3P的Datasheet PDF文件第2页浏览型号MBR3045/3P的Datasheet PDF文件第3页 
MBR3040 THUR MBR3050  
Dual High-Voltage Schottky Rectifiers  
REV:1.08  
◆ Half Bridge Rectified、Common Cathode Structure.  
◆ Multilayer Metal -Silicon Potential Structure.  
◆ Low Power Waste,High Efficiency.  
Typical Reference  
Data  
VRRM= 40V  
IF(AV)= 30A  
◆ Beautiful High Temperature Character.  
◆ Have Over Voltage protect loop,high reliability.  
◆ RoHs Product.  
VRRM= 45V  
IF(AV)= 30A  
● Low Voltage High Frequency Switching Power Supply.  
● Low Voltage High Frequency Invers Circuit.  
VRRM= 50V  
IF(AV)= 30A  
● Low Voltage Continued Circuit and Protection Circuit.  
■ MBR3040、MBR3045、MBR3050 Schottky diode,in the  
manufacture uses the main process technology includes:  
Silicon epitaxial substrate, P+ loop technology,The  
potential metal and the silicon alloy technology, the  
device uses the two chip, the common cathode, the plastic  
half package structure.  
Polarity  
Absolute Maximum Ratings  
MBR3050  
50  
Item  
Symbol MBR3040 MBR3045  
Unit  
V
Maximal Inverted Repetitive Peak Voltage  
Maximal DC Interdiction Voltage  
VRRM  
VDC  
40  
40  
45  
45  
50  
V
Average Rectified Forward Current TC=150℃  
Whole Device  
30  
15  
IFAV  
A
Unilateral  
Forward Peak Surge Current(Rated Load 8.3 Half  
Mssine Wave-According to JEDEC Method)  
150  
IFSM  
A
Operating Junction Temperature  
Storage Temperature  
-40- +175  
-40- +175  
TJ  
TSTG  
Maximum Thermal Resistance JunctiontoCase  
RθJC  
2.0  
℃/W  
Electricity Character  
Representat  
ive  
Test Condition  
Item  
Minimum  
MBR3040 MBR3045 MBR3050 Unit  
500  
10  
TJ =25℃  
uA  
mA  
V
IR  
VF  
VR=VRRM  
IF=15A  
TJ =125℃  
TJ =25℃  
0.68  
0.72  
0.70  
www.asemi.tw  
Page1  

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