MBR3040C-T/TF THRU MBR30200C-T/TF
SCHOTTKY BARRIER RECTIFIERS
Reverse Voltage - 40 to 200 V
Forward Current - 30 A
FEATURES
• High current capability
• Low forward voltage drop
• Low power loss, high efficiency
• High surge capability
• High temperature soldering guaranteed
• Mounting position: any
A1
A1
K
A2
K
A2
TO-220F
TO-220
Mechanical data
A1
A2
• Case: TO-220AB
K
• Approx. Weight: 1.9g ( 0.067oz)
• Case: ITO-220AB
• Approx. Weight: 2.1g ( 0.07oz)
• Terminals: Lead solderable per MIL-STD-202, Method 208
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified
MBR3040C-T MBR3045C-T MBR3060C-T MBR30100C-T MBR30150C-T MBR30200C-T
MBR3040C-TF MBR3045C-TF MBR3060C-TF MBR30100C-TF MBR30150C-TF MBR30200C-TF
TO-220
CHARACTERISTICS
Units
TO-220F
Maximum Recurrent Peak Reverse Voltage
Maximum RMS voltage
VRRM
VRMS
VDC
40
28
40
45
31.5
45
60
42
60
100
70
150
105
150
200
140
200
V
V
V
A
Maximum DC Blocking Voltage
100
Per diode
Per device
Maximum Average Forward
Rectified Current
15
30
IF(AV)
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
IFSM
200
A
on Rated Load (JEDEC method)
Per diode
Max Instantaneous
Per diode
VF
IR
0.70
600
0.75
0.85
0.90
0.92
V
Forward Voltage at 15 A
Ta = 25°C
Maximum DC Reverse Current
at Rated DC Reverse Voltage
0.1
20
0.05
20
mA
pF
Ta =125°C
Typical Junction Capacitance(1)
Typical Thermal Resistance(2)
400
Cj
°C/W
°C
RθJA
Tj
45
Operating Junction Temperature Range
Storage Temperature Range
-55 ~ +150
-55 ~ +150
-55 ~ +175
-55 ~ +175
Tstg
°C
(1)Measured at 1 MHz and applied reverse voltage of 4 V D.C
(2)P.C.B. mounted with 10cmX10cmX1mm copper pad areas.
REV.08
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