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MBR3030PT_1 PDF预览

MBR3030PT_1

更新时间： 2024-09-23 04:41:07
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美台 - DIODES /
页数 文件大小 规格书
3页 59K
描述
30A SCHOTTKY BARRIER RECTIFIER

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中文翻译

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MBR3030PT_1 数据手册

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MBR3030PT - MBR3060PT  
30A SCHOTTKY BARRIER RECTIFIER  
Features  
·
Guard Ring Die Construction for  
Transient Protection  
TO-3P  
Dim  
A
B
C
D
E
Min  
1.88  
4.68  
20.63  
18.5  
2.1  
Max  
2.08  
5.36  
22.38  
21.5  
2.4  
·
·
·
·
Low Power Loss, High Efficiency  
High Surge Capability  
A
B
High Current Capability and Low Forward Voltage Drop  
H
For Use in Low Voltage, High Frequency Inverters, Free  
Wheeling, and Polarity Protection Applications  
·
Lead Free Finish, RoHS Compliant (Note 4)  
J
S
R
C
D
G
H
J
0.51  
15.38  
1.90  
2.9Æ  
3.78  
5.2  
0.76  
16.25  
2.70  
3.65Æ  
4.50  
5.7  
K
Mechanical Data  
·
Case: TO-3P  
L
K
L
P
N
·
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Q
G
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
M
N
P
Terminals: Finish ¾ Bright Tin. Plated Leads Solderable  
per MIL-STD-202, Method 208  
0.89  
1.82  
2.92  
11.70  
¾
1.53  
2.46  
3.23  
12.84  
6.10  
·
·
·
·
Polarity: As Marked on Body  
Ordering Information: See Last Page  
Marking: Type Number  
E
Q
R
S
M
M
Weight: 5.6 grams (approximate)  
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MBR  
MBR  
MBR  
MBR  
MBR  
MBR  
Characteristic  
Symbol  
Unit  
3030PT 3035PT 3040PT 3045PT 3050PT 3060PT  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
21  
35  
40  
28  
45  
50  
35  
60  
42  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
24.5  
31.5  
V
A
Average Rectified Output Current  
Total Device (See Fig. 1)  
@ TC = 125°C  
30  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
200  
A
Forward Voltage Drop  
per element (Note 3)  
@ IF = 20A, TC  
@ IF = 20A, TC = 125°C  
@ IF = 30A, TC 25°C  
@ IF = 30A, TC = 125°C  
= 25°C  
¾
0.75  
0.65  
0.80  
0.75  
0.60  
0.76  
0.72  
VFM  
V
=
Peak Reverse Current  
@ TC 25°C  
=
1.0  
60  
5.0  
100  
IRM  
mA  
at Rated DC Blocking Voltage, per element @ TC = 125°C  
CT  
RqJc  
dV/dt  
Tj  
Typical Total Capacitance  
(Note 2)  
(Note 1)  
500  
1.4  
pF  
°C/W  
V/µs  
°C  
Typical Thermal Resistance Junction to Case  
Voltage Rate of Change (Rated VR)  
Operating Temperature Range  
Storage Temperature Range  
10,000  
-65 to +150  
-65 to +175  
TSTG  
°C  
Notes: 1. Thermal resistance junction to case mounted on heatsink.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
3. Pulse width £300 ms, duty cycle £2%.  
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.  
DS23017 Rev. 8 - 2  
1 of 3  
MBR3030PT - MBR3060PT  
www.diodes.com  
ã Diodes Incorporated  
123

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