Datasheet > MBR30200CT

MBR30200CT

更新时间： 2024-11-24 14:52:19

品牌	Logo	应用领域
鲁光 - LGE		肖特基二极管
页数	文件大小	规格书
2页	1604K
描述
肖特基二极管

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技术参数
数据手册

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MBR30200CT 技术参数

Case Style：	TO-220AB	IF（A）：	30
Maximum recurrent peak reverse voltage：	200	Peak forward surge current：	200
Maximum instantaneous forward voltage：	0.95	@IF(A)：	15
Maximum reverse current：	0.2	TJ(℃）：	/
class：	Diodes

MBR30200CT 数据手册

MBR3035CT-MBR30200CT

30.0AMP. Schottky Barrier Rectifiers

TO-220AB

Features

ꢀ

Plastic material used carries Underwriters Laboratory

Classifications 94V-0

ꢀ

Metal silicon junction, majority carrier conduction

Low power loss, high efficiency

High current capability, low forward voltage drop

High surge capability

For use in low voltage, high frequency inverters, free

wheeling, and polarity protection applications

Guardring for overvoltage protection

High temperature soldering guaranteed:

ꢀ

260 C/10 seconds,0.25”(6.35mm)from case

Mechanical Data

ꢀ

Cases: JEDEC TO-220AB molded plastic

Polarity: As marked

Dimensions in inches and (millimeters)

Mounting position: Any

Mounting torque: 5 in. - lbs. max

Weight: 2.24 grams

Maximum Ratings and Electrical Characteristics

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

MBR MBR MBR MBR MBR MBR MBR MBR

Symbol

Type Number

Units

3035 3045 3050 3060 3090 30100 30150

30200

200

140

200

100

150

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

105

150

100

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current at

I_(AV)

I_FRM

T =130 C

Peak Repetitive Forward Current (Rated V_R, Square

Wave, 20KHz) at Tc=130 C

Peak Forward Surge Current, 8.3 ms Single Half

Sine-wave Superimposed on Rated Load (JEDEC

method )

200

I_FSM

1.0

0.5

0.85

Peak Repetitive Reverse Surge Current (Note 1)

I_RRM

V_F

Maximum Instantaneous Forward Voltage at (Note 2)

0.7

0.92

0.8

=15A, Tc=25 C

Maximum Instantaneous Reverse Current

0.05

@ Tc=25 C at Rated DC Blocking Voltage Per Leg

I_R

@ Tc=125 C (Note 2)

Voltage Rate of Change, (Rated V_R)

1,000

460

V/uS

dV/dt

Typical Junction Capacitance

600

320

Maximum Thermal Resistance Per Leg (Note 3)

Operating Junction Temperature Range

Storage Temperature Range

1.4

-65 to +150

-65 to +175

C/W

R_θJC

T_J

TSTG

Notes:

1. 2.0us Pulse Width, f=1.0 KHz

2. Pulse Test: 300us Pulse Width, 1% Duty Cycle

3. Thermal Resistance from Junction to Case Per Leg, with Heatsink size (4”x6”x0.25”) Al-Plate

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

中文翻译

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与MBR30200CT相关器件

型号	品牌	获取价格	描述	数据表
MBR30200C-T	SHIKUES	获取价格	SCHOTTKY BARRIER RECTIFIERS
MBR30200CT-30A-TO-220AB	DGNJDZ	获取价格	Schottky Barrier Rectifier
MBR30200CT-BP	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 200V V(RRM), Silicon, TO-220AB, ROHS C
MBR30200CT-BP-HF	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 200V V(RRM), Silicon, TO-220AB, HALOGE
MBR30200CTF	SHIKUES	获取价格	SCHOTTKY BARRIER RECTIFIERS
MBR30200C-TF	SHIKUES	获取价格	SCHOTTKY BARRIER RECTIFIERS
MBR30200CTH	MCC	获取价格
MBR30200CTH-BP	MCC	获取价格	Rectifier Diode,
MBR30200CTH-BP-HF	MCC	获取价格	Rectifier Diode,
MBR30200CT-J	LGE	获取价格	30A High Power Schottky Barrier Rectifiers

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