MBR20L100CT thru MBR20L120CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
TO-220AB
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.9 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
MBR20L100CT
MBR20L120CT
SYMBOL
VRRM
UNIT
100
120
V
V
V
A
Maximum RMS voltage
VRMS
70
84
Maximum DC blocking voltage
Maximum average forward rectified current
VDC
100
120
IF(AV)
20
20
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
IFRM
A
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
IRRM
150
1
A
A
Peak repetitive reverse surge current (Note 1)
TYP
MAX
0.75
0.68
0.85
0.75
MAX
TYP
MAX
0.83
0.72
0.90
0.80
MAX
Maximum instantaneous forward voltage (Note 2)
IF= 10A, TJ=25℃
0.72
0.58
0.81
0.67
TYP
0.78
0.63
0.86
0.73
TYP
IF= 10A, TJ=125℃
VF
V
IF= 20A, TJ=25℃
IF= 20A, TJ=125℃
Maximum reverse current @ rated VR
TJ=25 ℃
IR
1.10
1.20
20
15
1.00
1.40
20
10
μA
TJ=125 ℃
mA
V/μs
OC/W
OC
Voltage rate of change (Rated VR)
Typical thermal resistance
10000
dV/dt
RθJC
TJ
2.8
3.0
Operating junction temperature range
Storage temperature range
- 55 to +150
- 55 to +150
OC
TSTG
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Document Number: DS_D1308038
Version: G13