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MBR2090CT-HE3/45 PDF预览

MBR2090CT-HE3/45

更新时间: 2024-09-17 19:35:51
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 143K
描述
Rectifier Diode, Schottky, 10A, 90V V(RRM),

MBR2090CT-HE3/45 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.26
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.65 V
JESD-609代码:e3最大非重复峰值正向电流:150 A
最高工作温度:150 °C最大输出电流:10 A
最大重复峰值反向电压:90 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:Matte Tin (Sn)Base Number Matches:1

MBR2090CT-HE3/45 数据手册

 浏览型号MBR2090CT-HE3/45的Datasheet PDF文件第2页浏览型号MBR2090CT-HE3/45的Datasheet PDF文件第3页浏览型号MBR2090CT-HE3/45的Datasheet PDF文件第4页浏览型号MBR2090CT-HE3/45的Datasheet PDF文件第5页 
MBR(F,B)2090CT & MBR(F,B)20100CT  
Vishay General Semiconductor  
Dual Common-Cathode High-Voltage Schottky Rectifier  
FEATURES  
TO-220AB  
ITO-220AB  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
3
3
2
2
1
MBR2090CT  
MBR20100CT  
PIN 1  
1
MBRF2090CT  
MBRF20100CT  
• Meets MSL level 1, per J-STD-020C, LF max peak  
of 245 °C (for TO-263AB package)  
PIN 2  
CASE  
PIN 1  
PIN 2  
PIN 3  
• Solder Dip 260 °C, 40 seconds (for TO-220AB &  
ITO-220AB package)  
PIN 3  
TO-263AB  
K
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
2
TYPICAL APPLICATIONS  
1
For use in high frequency rectifier of switching  
mode power supplies, free-wheeling diodes, dc-to-dc  
converters or polarity protection application.  
MBRB2090CT  
MBRB20100CT  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
10 A x 2  
90 V, 100 V  
150 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
VF  
0.65 V  
Polarity: As marked  
Tj max  
150 °C  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
VRRM  
MBR2090CT MBR20100CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
90  
90  
90  
100  
100  
100  
V
V
V
VRWM  
VDC  
Total device  
Maximum average forward rectified current at TC = 133 °C  
per diode  
20  
10  
IF(AV)  
A
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
150  
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dv/dt  
0.5  
A
10000  
V/µs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 150  
Isolation voltage (ITO-220AB only)  
From terminal to heatsink t = 1 minute  
VAC  
1500  
V
Document Number 88672  
18-Aug-06  
www.vishay.com  
1

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