5秒后页面跳转
MBR2060CT-E1 PDF预览

MBR2060CT-E1

更新时间: 2024-01-14 08:47:47
品牌 Logo 应用领域
BCDSEMI 二极管高压局域网高电压电源
页数 文件大小 规格书
11页 910K
描述
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MBR2060CT-E1 技术参数

生命周期:Transferred零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.31
Is Samacsys:N其他特性:LOW NOISE
应用:HIGH VOLTAGE POWER配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:150 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:60 V
表面贴装:NO技术:SCHOTTKY
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBR2060CT-E1 数据手册

 浏览型号MBR2060CT-E1的Datasheet PDF文件第2页浏览型号MBR2060CT-E1的Datasheet PDF文件第3页浏览型号MBR2060CT-E1的Datasheet PDF文件第4页浏览型号MBR2060CT-E1的Datasheet PDF文件第5页浏览型号MBR2060CT-E1的Datasheet PDF文件第6页浏览型号MBR2060CT-E1的Datasheet PDF文件第7页 
Data Sheet  
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER  
MBR2060C  
General Description  
Main Product Characteristics  
High voltage dual Schottky rectifier suited for switch  
mode power supplies and other power converters. This  
device is intended for use in medium voltage opera-  
tion, and particularly, in high frequency circuits where  
low switching losses and low noise are required.  
IF (AV)  
VRRM  
TJ  
2×10A  
60V  
150oC  
0.75V  
VF (max)  
MBR2060C is available in TO-220-3, TO-220-3 (2)  
and TO-220F-3 packages.  
Mechanical Characteristics  
Features  
·
Case: Epoxy, Molded  
·
High Surge Capacity  
150oC Operating Junction Temperature  
20A Total (10A Each Diode Leg)  
Guard-ring for Stress Protection  
Pb-free Package  
·
·
Epoxy Meets UL 94V-0 @ 0.125in.  
Weight (Approximately):  
1.9 Grams (TO-220-3, TO-220-3 (2) and  
TO-220F-3)  
Finish: All External Surfaces Corrosion Resistant  
and Terminal  
·
·
·
·
·
·
·
Leads are Readily Solderable  
Lead Temperature for Soldering Purposes:  
Applications  
·
·
·
Power Supply Output Rectification  
Power Management  
Instrumentation  
o
260 C Maximumfor 10 Seconds  
TO-220F-3  
TO-220-3(Optional)  
TO-220-3 (2)  
Figure 1. Package Types of MBR2060C  
Mar. 2011 Rev. 1. 3  
BCD Semiconductor Manufacturing Limited  
1

与MBR2060CT-E1相关器件

型号 品牌 描述 获取价格 数据表
MBR2060CT-E3/45 VISHAY DIODE 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R

获取价格

MBR2060CT-E3/4W VISHAY Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 60V V(RRM), Silicon, TO-220AB,

获取价格

MBR2060CTE3/TU MICROSEMI Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 60V V(RRM), Silicon, TO-220AB, PLASTIC

获取价格

MBR2060CTF SHIKUES SCHOTTKY BARRIER RECTIFIERS

获取价格

MBR2060C-TF SHIKUES SCHOTTKY BARRIER RECTIFIERS

获取价格

MBR2060CTF-E1 BCDSEMI HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

获取价格