MBR/B20xxCT Series
20A Dual Schottky Rectifiers
PRODUCT SUMMARY
Voltage ratings available from 35 to 60 Volts
FEATURES
Plastic packages have Underwriters Laboratory Flammability
Classification 94V-0
Dual rectifier construction, positive center tap
Metal-silicon junction, majority carrier conduction
Low power loss, high efficiency
Guardring for overvoltage protection
For use in low voltage, high frequency inverters, free wheeling,
and polarity protection applications
MECHANICAL DATA
High temperature soldering guaranteed:
250°C for 10 seconds, 0.25" (6.35mm) from case
Case: JEDEC TO-220AB (MBR...) or ITO-220AB (MBRB...) molded plastic body - for dimensions, see page 3
Terminals: Matte-Sn plated leads, solderable per MIL-STD-750, method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 ounce, 2.24 grams
Pb-free; RoHS-compliant
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR2035CT MBR2045CT MBR2050CT MBR2060CT
MBRB2035CT MBRB2045CT MBRB2050CT MBRB2060CT
Parameter
Symbol
Units
Maximum repetitive peak reverse voltage
Working peak reverse voltage
VRRM
VRWM
VDC
35
35
35
45
45
45
50
50
50
60
60
60
Volts
Volts
Volts
Maximum DC blocking voltage
Maximum average forward
rectified current at TC=135°C
Total device
Per leg
20
10
IF(AV)
IFRM
IFSM
Amps
Amps
Amps
Peak repetitive forward current per leg at (rated VR, sq.
20
wave, 20kHz) at TC=135oC
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method) per leg
150
Peak repetitive reverse surge current per leg at tp =
IRRM
1.0
0.5
Amps
2.0 su,
1KHz
Voltage rate of change (rated VR)
dv/dt
10,000
V/ us
Maximum instantaneous forward voltage per leg (Note 1)
at IF=10A, TC=25oC
-
0.80
0.70
0.95
0.85
at IF=10A, TC=125oC
VF
0.57
0.84
0.72
Volt
at IF= 20A, TC=25oC
at IF= 02A, TC=125oC
Maximum reverse current at
rated DC blocking voltage
per leg (Note 1)
TC=25oC
0.1
15
0.15
150
mA
IR
TC=125oC
Thermal resistance from junction to case per leg
Rθ
2.0
°C/W
JC
Operating junction temperature range
Storage temperature range
TJ
-55 to +150
-55 to +150
oC
oC
TSTG
Notes:
1. Pulse test: 300us pulse width, 1% duty cycle
12/03/2006 Rev.4.01
www.SiliconStandard.com
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