Datasheet > MBR2060CT

MBR2060CT

更新时间： 2024-10-01 04:41:07

品牌	Logo	应用领域
KEC		二极管局域网
页数	文件大小	规格书
2页	35K
描述
SCHOTTKY BARRIER TYPE DIODE

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中文翻译

获取价格

数据手册

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MBR2060CT 数据手册

SEMICONDUCTOR

MBR2060CT

SCHOTTKY BARRIER TYPE DIODE

TECHNICAL DATA

SWITCHING TYPE POWER SUPPLY APPLICATION.

CONVERTER & CHOPPER APPLICATION.

FEATURES

Average Output Rectified Current

: I_O=20A.

DIM MILLIMETERS

9.9 + 0.2

15.95 MAX

1.3+0.1/-0.05

Repetitive Peak Reverse Voltage

: V_RRM=60V.

0.8+ 0.1

3.6 0.2

2.8+ 0.1

Fast Reverse Recovery Time : t_rr=35ns.

3.7

0.5+0.1/-0.05

1.5

13.08+ 0.3

1.46

1.4 + 0.1

1.27+ 0.1

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

2.54+ 0.2

4.5 0.2

SYMBOL

V_RRM

RATING

UNIT

2.4 0.2

9.2 + 0.2

Repetitive Peak Reverse Voltage

Average Output Rectified

1. ANODE

2. CATHODE

3. ANODE

I_O

Current (Tc=108 ) (Note)

Peak One Cycle Surge Forward

Current (Non-Repetitive 60Hz)

I_FSM

250

TO-220AB

T_j

Junction Temperature

-40 150

-55 150

T_stg

Storage Temperature Range

Note : average forward current of centertap full wave connection.

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

SYMBOL

V_FM

TEST CONDITION

MIN.

TYP.

MAX.

0.75

UNIT

I_FM=10A

Peak Forward Voltage

(Note)

Repetitive Peak

Reverse Current

I_RRM

V_RRM=Rated

150

(Note)

t_rr

Reverse Recovery Time

I_F=1.0A, di/dt=-30A/

Juction to Case

R_th(j-c)

Thermal Resistance

(Note)

1.7

Note : A value of one cell

2008. 1. 3

Revision No : 0

1/2

中文翻译

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