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MBR2060CT PDF预览

MBR2060CT

更新时间： 2024-10-01 04:41:07
品牌 Logo 应用领域
TSC 二极管局域网
页数 文件大小 规格书
2页 98K
描述
20.0 AMPS. Schottky Barrier Rectifiers

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中文翻译

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MBR2060CT 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：1.38其他特性：FREE WHEELING DIODE, LOW POWER LOSS
应用：EFFICIENCY外壳连接：CATHODE
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.95 V
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
湿度敏感等级：1最大非重复峰值正向电流：150 A
元件数量：2相数：1
端子数量：3最高工作温度：150 °C
最低工作温度：-65 °C最大输出电流：10 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT认证状态：Not Qualified
最大重复峰值反向电压：60 V子类别：Rectifier Diodes
表面贴装：NO技术：SCHOTTKY
端子面层：Pure Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLEBase Number Matches：1

MBR2060CT 数据手册

 浏览型号MBR2060CT的Datasheet PDF文件第2页 
MBR2035CT THRU MBR20200CT  
20.0 AMPS. Schottky Barrier Rectifiers  
Voltage Range  
35 to 200 Volts  
Current  
20.0 Amperes  
TO-220  
Features  
ꢀ
Plastic material used carries Underwriters Laboratory  
Classifications 94V-0  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Metal silicon junction, majority carrier conduction  
Low power loss, high efficiency  
High current capability, low forward voltage drop  
High surge capability  
For use in low voltage, high frequency inverters, free  
wheeling, and polarity protection applications  
Guardring for overvoltage protection  
ꢀ
ꢀ
High temperature soldering guaranteed:  
260oC/10 seconds,0.25”(6.35mm)from case  
Mechanical Data  
ꢀ
Cases: JEDEC TO-220 molded plastic  
Terminals: Leads solderable per MIL-STD-750, Method  
2026  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Polarity: As marked  
Mounting position: Any  
Mounting torque: 5 in. - lbs. max  
Weight: 0.08 ounce, 2.24 grams  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25℃ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBR20 MBR20 MBR20 MBR20 MBR20 MBR20 MBR20  
Symbol  
Units  
Type Number  
35CT  
45CT 50CT  
60CT 100CT 150CT 200CT  
V
V
V
35  
45  
31  
45  
50  
35  
50  
60  
42  
60  
100  
70  
150  
105  
150  
200  
140  
200  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
24  
35  
100  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
at TC=135oC  
I(AV)  
IFRM  
IFSM  
IRRM  
A
A
20  
Peak Repetitive Forward Current (Rated VR,  
Square Wave, 20KHz) at Tc=135oC  
Peak Forward Surge Current, 8.3 ms Single Half  
Sine-wave Superimposed on Rated Load (JEDEC  
method )  
20.0  
A
A
150  
Peak Repetitive Reverse Surge Current (Note 1)  
1.0  
0.5  
1.0  
Maximum Instantaneous Forward Voltage at (Note 2)  
IF=10A, TC=25OC  
-
0.80  
0.85  
0.99  
0.87  
1.23  
1.10  
IF=10A, TC=125OC  
0.57  
0.84  
0.72  
0.70  
0.95  
0.85  
0.75  
0.95  
0.85  
V
VF  
IF=20A, TC=25OC  
IF=20A, TC=125OC  
Maximum Instantaneous Reverse Current @ Tc=25  
℃
0.1  
0.15  
1.0  
20  
mA  
mA  
IR  
at Rated DC Blocking Voltage  
@ Tc=125℃  
15  
V/uS  
pF  
10,000  
Voltage Rate of Change, (Rated VR)  
Typical Junction Capacitance  
dV/dt  
Cj  
400  
320  
℃/W  
℃
RθJC  
TJ  
1.0  
2.0  
Typical Thermal Resistance Per Leg (Note 3)  
Operating Junction Temperature Range  
-65 to +150  
-65 to +175  
℃
TSTG  
Storage Temperature Range  
Notes: 1. 2.0us Pulse Width, f=1.0 KHz  
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle  
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink Size (4”x6”x0.25”) Al-Plate.  
- 172 -  
12

中文翻译

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