5秒后页面跳转
MBR2060CT PDF预览

MBR2060CT

更新时间: 2024-10-01 00:02:03
品牌 Logo 应用领域
SIRECTIFIER 二极管局域网
页数 文件大小 规格书
2页 103K
描述
肖特基势垒二极管Schottky Barrier Diodes,高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes,Tj = -65°C ~ 175°C, Tjm = 175°C。

MBR2060CT 数据手册

 浏览型号MBR2060CT的Datasheet PDF文件第2页 
MBR2050CT thru MBR2060CT  
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers  
Dimensions TO-220AB  
Dim.  
Inches  
Min. Max.  
Milimeter  
Min. Max.  
A
C
A
A
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
0.500 0.550  
0.580 0.630  
0.390 0.420  
0.139 0.161  
0.230 0.270  
0.100 0.125  
0.045 0.065  
0.110 0.230  
0.025 0.040  
12.70 13.97  
14.73 16.00  
9.91 10.66  
C
C(TAB)  
A
3.54  
5.85  
2.54  
1.15  
2.79  
0.64  
2.54  
4.32  
1.14  
0.35  
2.29  
4.08  
6.85  
3.18  
1.65  
5.84  
1.01  
BSC  
4.82  
1.39  
0.56  
2.79  
A=Anode, C=Cathode, TAB=Cathode  
VRRM  
V
VRMS  
V
VDC  
V
0.100  
BSC  
0.170 0.190  
0.045 0.055  
0.014 0.022  
0.090 0.110  
MBR2050CT  
MBR2060CT  
50  
35  
50  
60  
60  
42  
Symbol  
Characteristics  
Maximum Ratings  
Unit  
I(AV)  
Maximum Average Forward Rectified Current @TC=125oC  
20  
A
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave  
Superimposed On Rated Load (JEDEC METHOD)  
IFSM  
150  
dv/dt  
Voltage Rate Of Change (Rated VR)  
IF=10A @TJ=25oC  
Maximum Forward  
Voltage (Note 1)  
10000  
V/us  
0.80  
0.70  
0.95  
0.85  
IF=10A @TJ=125oC  
IF=20A @TJ=25oC  
IF=20A @TJ=125oC  
VF  
V
Maximum DC Reverse Current  
At Rated DC Blocking Voltage  
@TJ=25oC  
0.1  
15  
IR  
mA  
@TJ=125oC  
2.0  
oC/W  
pF  
oC  
ROJC  
CJ  
Typical Thermal Resistance (Note 2)  
Typical Junction Capacitance Per Element (Note 3)  
Operating Temperature Range  
400  
-55 to +150  
-55 to +175  
TJ  
TSTG  
Storage Temperature Range  
oC  
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.  
2. Thermal Resistance Junction To Case.  
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.  
FEATURES  
MECHANICAL DATA  
* Metal of silicon rectifier, majority carrier conducton  
* Guard ring for transient protection  
* Low power loss, high efficiency  
* High current capability, low VF  
* Case: TO-220AB molded plastic  
* Polarity: As marked on the body  
* Weight: 0.08 ounces, 2.24 grams  
* Mounting position: Any  
* High surge capacity  
* For use in low voltage, high frequency inverters, free  
whelling, and polarity protection applications  

与MBR2060CT相关器件

型号 品牌 获取价格 描述 数据表
MBR2060C-T SHIKUES

获取价格

SCHOTTKY BARRIER RECTIFIERS
MBR2060CT/45-E3 VISHAY

获取价格

DIODE 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC PACKAGE-3, Rectifier Diode
MBR2060CT-1 SMC

获取价格

SCHOTTKY RECTIFIER
MBR2060CT-1-G SENSITRON

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, Silicon, TO-262AA, GREEN, PLASTIC, TO-
MBR2060CT-BP MCC

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 60V V(RRM), Silicon, TO-220AB, ROHS CO
MBR2060CT-BP-HF MCC

获取价格

暂无描述
MBR2060CTD DYELEC

获取价格

20 AMPERES SCHOTTKY BARRIER RECTIFIERS
MBR2060CT-E1 BCDSEMI

获取价格

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR2060CT-E3/45 VISHAY

获取价格

DIODE 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
MBR2060CT-E3/4W VISHAY

获取价格

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 60V V(RRM), Silicon, TO-220AB,