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MBR2050 PDF预览

MBR2050

更新时间: 2024-11-21 14:52:19
品牌 Logo 应用领域
鲁光 - LGE 肖特基二极管
页数 文件大小 规格书
2页 1053K
描述
肖特基二极管

MBR2050 技术参数

Case Style:TO-220ACIF(A):20
Maximum recurrent peak reverse voltage:50Peak forward surge current:150
Maximum instantaneous forward voltage:0.75@IF(A):20
Maximum reverse current:0.1TJ(℃):/
class:Diodes

MBR2050 数据手册

 浏览型号MBR2050的Datasheet PDF文件第2页 
MBR2040-MBR20200  
Schottky Barrier Rectifiers  
VOLTAGE RANGE: 40 - 200 V  
CURRENT: 20 A  
TO-220AC  
Features  
4.5± 0.2  
High surge capacity.  
10.2± 0.2  
1.4± 0.2  
For use in low voltage, high frequency inverters, free  
wheeling, and polarity protection applications.  
φ 3.8± 0.15  
111  
Metal silicon junction, majority carrier conduction.  
High current capacity, low forward voltage drop.  
Guard ring for over voltage protection.  
PIN  
2
1
2.6± 0.2  
Mechanical Data  
Case:JEDEC TO-220AC,molded plastic body  
0.9± 0.1  
Polarity: As marked  
Position: Any  
0.5± 0.1  
5.0± 0.1  
Dimensions in millimeters  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
ambient temperature unless otherwise specified.  
Ratings at 25  
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.  
MBR  
2040  
MBR MBR MBR MBR MBR MBR MBR  
2045 2050 2060 2080 20100 20150 20200  
Symbol  
UNITS  
Parameter  
Maximum recurrent peak reverse voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
40  
28  
40  
45  
32  
45  
50  
35  
50  
60  
42  
60  
80  
56  
80  
100 150  
70 105  
200  
140  
200  
V
V
V
Maximum DC blocking voltage  
100 150  
Maximum average forw ard total device  
m rectified current @TC = 120°C  
IF(AV)  
20  
A
A
Peak forw ard surge current 8.3ms single half  
IFSM  
200  
b
sine-w ave superimposed on rated load  
Maximum forw ard  
voltage  
0.63  
0.84  
0.75  
VF  
(IF=20A,TC=25  
)
V
(Note 1)  
Maximum reverse current  
@TC=25  
0.1  
50  
IR  
m A  
/W  
at rated DC blocking voltage  
@TC=100  
Maximum thermal resistance (Note2)  
Operating junction temperature range  
Storage temperature range  
RθJC  
TJ  
3.0  
- 55 ---- + 150  
- 55 ---- + 150  
TSTG  
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.  
2. Thermal resistance from junction to case.  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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