Datasheet > MBR2030CT_1

MBR2030CT_1

更新时间： 2024-09-29 04:41:07

品牌	Logo	应用领域
美台 - DIODES		/
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3页	63K
描述
20A SCHOTTKY BARRIER RECTIFIER

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中文翻译

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MBR2030CT_1 数据手册

MBR2030CT - MBR2060CT

20A SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

TO-220AB

Dim

Min

14.48

10.00

2.54

5.90

2.80

12.70

2.40

0.69

3.54

4.07

1.15

0.30

2.04

Max

15.75

10.40

3.43

6.40

3.93

14.27

2.70

0.93

3.78

4.82

1.39

0.50

2.79

Low Power Loss, High Efficiency

High Surge Capability

High Current Capability and Low Forward Voltage Drop

For Use in Low Voltage, High Frequency Inverters, Free

Wheeling, and Polarity Protection Applications

Lead Free Finish, RoHS Compliant (Note 4)

Mechanical Data

Case: TO-220AB

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Matte Tin Finish Solderable per MIL-STD-202,

Method 208

Pin 1

Pin 2

Pin 3

Case

Polarity: As Marked on Body

Marking: Type Number

All Dimensions in mm

Weight: 2.24 grams (approx)

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MBR

Characteristic

Symbol

Unit

2030CT 2035CT 2040CT 2045CT 2050CT 2060CT

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_O

RMS Reverse Voltage

24.5

31.5

Average Rectified Output Current

@ T_C= 125°C

(Note 1)

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on rated load

(JEDEC Method)

I_FSM

150

Forward Voltage Drop (Note 3) @ I_F= 20A, T_C

= 25°C

0.84

0.72

0.57

0.95

0.85

0.70

V_FM

@ I_F= 20A, T_C= 125°C

@ I_F= 10A, T_C= 125°C

Peak Reverse Current

at Rated DC Blocking Voltage

@ T_C= 25°C

@ T_C= 125°C

0.1

I_RM

C_T

R_qJc

Typical Total Capacitance

(Note 2)

650

2.0

°C/W

V/ms

°C

Typical Thermal Resistance Junction to Case

Voltage Rate of Change (Rated V_R)

(Note 1)

dV/dt

T_j,T_STG

1000

10,000

Operating and Storage Temperature Range

-65 to +150

Notes:

1. Thermal resistance junction to case mounted on heatsink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. Pulse width £300 ms, duty cycle £2%.

4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.

DS23016 Rev. 9 - 2

1 of 3

MBR2030CT-MBR2060CT

www.diodes.com

ã Diodes Incorporated

12 3

中文翻译

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