Datasheet > MBR16150CT

MBR16150CT

更新时间： 2024-09-24 14:49:15

品牌	Logo	应用领域
鲁光 - LGE		肖特基二极管
页数	文件大小	规格书
3页	1315K
描述
肖特基二极管

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技术参数
数据手册

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MBR16150CT 技术参数

Case Style：	TO-220AB	IF（A）：	16
Maximum recurrent peak reverse voltage：	150	Peak forward surge current：	125
Maximum instantaneous forward voltage：	0.80	@IF(A)：	8.0
Maximum reverse current：	0.1	TJ(℃）：	/
class：	Diodes

MBR16150CT 数据手册

MBR1640CT-MBR16200CT

Schottky Barrier Rectifiers

VOLTAGE RANGE: 40 - 200 V

CURRENT: 16 A

TO-220AB

Features

High surge capacity.

For use in low voltage, high frequency inverters, free

wheeling, and polarity protection applications.

111

Metal silicon junction, majority carrier conduction.

High current capacity, low forward voltage drop.

Guard ring for over voltage protection.

Mechanical Data

Case:JEDEC TO-220AB,molded plastic body

Polarity: As marked

Position: Any

Weight: 0.071ounce, 2.006 grams

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

MBR

SYMBOL

UNIT

CHARACTERISTICS

1640CT

1660CT

16100CT

16150CT

16200CT

RRM

Maximum Recurrent Peak Reverse Voltage

100

150

105

150

200

140

200

Maximum RMS Voltage

V^RMS

V^DC

Maximum DC Blocking Voltage

100

Maximum Average Forward

Rectified Current ( See Fig.1)

Peak Forward Surge Current

I^(AV)

16.0

I^FSM

150

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load (JEDEC Method)

V^F

0.75

0.85

3.0

0.92

Peak Forward Voltage (Note1)

IF=8A @T^J=25ć

0.70

Maximum DC Reverse Current

at Rated DC Bolcking Voltage

@T^J=25ć

0.5

0.2

@T^J=125ć

Typical Thermal Resistance (Note2)

R^șJC

ć/W

-55 to +150

Operating Temperature Range

Storage Temperature Range

T^J

T^STG

NOTES:1.300us pulse width,2% duty cycle.

2.Thermal resistance junction to case.

3. The typical data above is for reference only.

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

12 3

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