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MBR16100CT-BP PDF预览

MBR16100CT-BP

更新时间: 2024-09-23 19:50:19
品牌 Logo 应用领域
美微科 - MCC 局域网功效瞄准线二极管
页数 文件大小 规格书
3页 286K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 16A, 100V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3

MBR16100CT-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.1
其他特性:LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.75 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:125 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:16 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBR16100CT-BP 数据手册

 浏览型号MBR16100CT-BP的Datasheet PDF文件第2页浏览型号MBR16100CT-BP的Datasheet PDF文件第3页 
M C C  
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20736 Marilla Street Chatsworth  
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MBR16100CT  
Micro Commercial Components  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Features  
16 Amp  
Schootky Barrier  
Rectifier  
Guard ring for transient protection  
Low power loss high efficiency  
High surge capacity,High current capability  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Halogen free available upon request by adding suffix "-HF"  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
100 Volts  
·
·
Maximum Ratings  
TO-220AB  
Operating Temperature :-50oC to +150oC  
Storage Temperature: - 5 0°C to +150°C  
Mounting Torgue: 5 in-lbs Maximum  
C
B
S
F
MCC  
Catalog  
Number  
Maximum  
Recurrent  
Peak Reverse Voltage  
Voltage  
Maximum Maximum  
DC  
Device  
Marking  
Q
RMS  
T
Blocking  
Voltage  
100V  
A
U
MBR16100CT MBR16100CT  
100 V  
70V  
1
2
3
H
Electrical Characteristics @ 25°C Unless Otherwise Specified  
K
Average Forward  
Current  
IF(AV)  
16A  
TC = 100°C  
V
L
J
Peak Forward Surge  
Current  
IFSM  
125A  
8.3ms, half sine  
D
R
G
N
Maximum Forward  
Voltage Drop Per  
Element  
PIN 1  
PIN 3  
PIN 2  
CASE  
VF  
IFM = 8A  
TJ = 25°C  
DIMENSIONS  
.85V  
.75V  
INCHES  
MM  
TJ = 125°C  
MIN  
MAX  
15.88  
10.67  
NOTE  
DIM  
A
MIN  
.560  
MAX  
.625  
14.22  
9.65  
3.56  
B
C
.380  
.140  
.420  
.190  
4.82  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
D
F
.020  
.139  
.190  
---  
.045  
.161  
.110  
.250  
.025  
0.51  
3.53  
2.29  
---  
1.14  
4.09  
2.79  
6.35  
0.64  
G
H
J
TJ = 25°C  
TJ = 125°C  
0.1mA  
100mA  
IR  
.012  
0.30  
K
L
.500  
.045  
.580  
.060  
12.70  
1.14  
14.73  
1.52  
Typical Junction  
Capacitance  
N
Q
.190  
.100  
.210  
.135  
4.83  
2.54  
5.33  
3.43  
CJ  
275pF Measured at  
R
S
T
U
V
.080  
.045  
.230  
-----  
.115  
.055  
.270  
.050  
-----  
2.04  
1.14  
5.84  
-----  
2.92  
1.39  
6.86  
1.27  
-----  
1.0MHz, VR=4.0V  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
.045  
1.15  
www.mccsemi.com  
1 of 3  
Revision: B  
2013/01/01  

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