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MBR16100CT-B PDF预览

MBR16100CT-B

更新时间: 2024-09-24 04:44:59
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 1253K
描述
Rectifier Diode,

MBR16100CT-B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.46JESD-609代码:e0
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

MBR16100CT-B 数据手册

 浏览型号MBR16100CT-B的Datasheet PDF文件第2页浏览型号MBR16100CT-B的Datasheet PDF文件第3页 
M C C  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
MBR16100CT  
Micro Commercial Components  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
16 Amp  
Schootky Barrier  
Rectifier  
Features  
·
·
Guard ring for transient protection  
Low power loss high efficiency  
·
High surge capacity , High current capability  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
100 Volts  
Maximum Ratings  
·
·
Operating Temperature: - 5 0 °C to +150°C  
Storage Temperature: - 5 0 °C to +150°C  
TO-220AB  
B
L
M
C
MCC  
Catalog  
Number  
Maximum  
Recurrent  
Peak Reverse Voltage  
Voltage  
Maximum Maximum  
Device  
Marking  
D
RMS  
DC  
A
K
Blocking  
Voltage  
100V  
E
F
PIN  
MBR16100CT MBR16100CT  
100 V  
70V  
1
3
G
I
J
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
16A  
N
TC = 100°C  
H
H
PIN 1  
PIN 3  
PIN 2  
CASE  
Peak Forward Surge  
Current  
IFSM  
125A  
8.3ms, half sine  
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
Maximum Forward  
Voltage Drop Per  
Element  
ꢀ ꢀ ꢀ ꢀ  
INCHES  
MM  
VF  
IFM = 8A  
TJ = 25°C  
TJ = 125°C  
ꢁꢂꢃ  
A
B
C
D
E
ꢃꢂꢄ  
.560  
.380  
.100  
.230  
.380  
ꢃꢅꢆ  
ꢃꢂꢄ  
14.22  
9.65  
ꢃꢅꢆ  
15.88  
10.67  
3.43  
ꢄꢇꢈꢉ  
.625  
.420  
.135  
.85V  
.75V  
2.54  
.270  
.420  
5.84  
9.65  
6.86  
10.67  
F
G
H
I
J
K
L
M
------  
.500  
.090  
.020  
.012  
.139  
.250  
.580  
.110  
.045  
.025  
.161  
------  
12.70  
2.29  
0.51  
0.30  
3.53  
3.56  
1.14  
6.35  
14.73  
2.79  
1.14  
0.64  
4.09  
4.83  
1.40  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
TJJ = 25°C  
TJJ = 125°C  
0.1mA  
100mA  
IR  
.140  
.045  
.190  
.055  
N
.080  
.115  
2.03  
2.92  
Typical Junction  
Capacitance  
CJ  
275pF Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www.mccsemi.com  
1 of 3  
Revision: 6  
2005/05/07  

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